Part Details for MG100Q2YS11 by Toshiba America Electronic Components
Overview of MG100Q2YS11 by Toshiba America Electronic Components
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part Details for MG100Q2YS11
MG100Q2YS11 CAD Models
MG100Q2YS11 Part Data Attributes
|
MG100Q2YS11
Toshiba America Electronic Components
Buy Now
Datasheet
|
Compare Parts:
MG100Q2YS11
Toshiba America Electronic Components
TRANSISTOR 100 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor
|
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | TOSHIBA CORP | |
Package Description | FLANGE MOUNT, R-PUFM-X7 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Collector Current-Max (IC) | 100 A | |
Collector-Emitter Voltage-Max | 1200 V | |
Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | |
Fall Time-Max (tf) | 1000 ns | |
Gate-Emitter Voltage-Max | 20 V | |
JESD-30 Code | R-PUFM-X7 | |
Number of Elements | 2 | |
Number of Terminals | 7 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 800 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | UNSPECIFIED | |
Terminal Position | UPPER | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
VCEsat-Max | 2.7 V |
Alternate Parts for MG100Q2YS11
This table gives cross-reference parts and alternative options found for MG100Q2YS11. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MG100Q2YS11, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
BSM100GB120DN2 | Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel, HALF-BRIDGE 2, 7 PIN | Infineon Technologies AG | MG100Q2YS11 vs BSM100GB120DN2 |
CM150DY-24T | Insulated Gate Bipolar Transistor, | Mitsubishi Electric | MG100Q2YS11 vs CM150DY-24T |
1MBI200SA-120 | Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel | Fuji Electric Co Ltd | MG100Q2YS11 vs 1MBI200SA-120 |
MG600Q1US59A | Insulated Gate Bipolar Transistor, 600A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | Mitsubishi Electric | MG100Q2YS11 vs MG600Q1US59A |
MG600Q1US65H | TRANSISTOR 600 A, 1200 V, N-CHANNEL IGBT, 2-109F1A, 4 PIN, Insulated Gate BIP Transistor | Toshiba America Electronic Components | MG100Q2YS11 vs MG600Q1US65H |
2MBI150SC-120 | Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel, M233, 7 PIN | Fuji Electric Co Ltd | MG100Q2YS11 vs 2MBI150SC-120 |
MII150-12A4 | Insulated Gate Bipolar Transistor, 180A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | Littelfuse Inc | MG100Q2YS11 vs MII150-12A4 |
MG100Q2YS50A | TRANSISTOR 150 A, 1200 V, N-CHANNEL IGBT, 2-95A4A, 7 PIN, Insulated Gate BIP Transistor | Toshiba America Electronic Components | MG100Q2YS11 vs MG100Q2YS50A |
APTGT200U120D4 | Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, MODULE-4 | Microsemi Corporation | MG100Q2YS11 vs APTGT200U120D4 |
FZ400R12KS4 | Insulated Gate Bipolar Transistor, 510A I(C), 1200V V(BR)CES, N-Channel, MODULE-5 | Infineon Technologies AG | MG100Q2YS11 vs FZ400R12KS4 |