Transistors
MGSF3454VT1
Description: 4.2A, 30V, 0.065ohm, N-CHANNEL, Si, POWER, MOSFET, TSOP-6

Overview of MGSF3454VT1 by Motorola Mobility LLC

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

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Part Data Attributes for MGSF3454VT1 by Motorola Mobility LLC

MGSF3454VT1
Motorola Mobility LLC
-
-
Part Life Cycle Code
Transferred
Ihs Manufacturer
MOTOROLA INC
Part Package Code
TSOP
Package Description
SMALL OUTLINE, R-PDSO-G6
Pin Count
6
Reach Compliance Code
unknown
ECCN Code
EAR99
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
30 V
Drain Current-Max (ID)
4.2 A
Drain-source On Resistance-Max
0.065 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PDSO-G6
JESD-609 Code
e0
Number of Elements
1
Number of Terminals
6
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
2 W
Pulsed Drain Current-Max (IDM)
20 A
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
Tin/Lead (Sn/Pb)
Terminal Form
GULL WING
Terminal Position
DUAL
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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  1. MGSF3454VT1
    Motorola Mobility LLC
    4.2A, 30V, 0.065ohm, N-CHANNEL, Si, POWER, MOSFET, TSOP-6
    VS

Alternate Parts for MGSF3454VT1

This table gives cross-reference parts and alternative options found for MGSF3454VT1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MGSF3454VT1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
MGSF3454VT3 Power Field-Effect Transistor, 4.2A I(D), 30V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TSOP-6 Motorola Semiconductor Products MGSF3454VT1 vs MGSF3454VT3
MGSF3454VT3 4.2A, 30V, 0.065ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, TSOP-6 onsemi MGSF3454VT1 vs MGSF3454VT3
MGSF3454VT1 4.2A, 30V, 0.065ohm, N-CHANNEL, Si, POWER, MOSFET, TSOP-6 onsemi MGSF3454VT1 vs MGSF3454VT1
Part Number Description Manufacturer Compare
IRFR4615TRRPBF Power Field-Effect Transistor, 33A I(D), 150V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3 Infineon Technologies AG MGSF3454VT1 vs IRFR4615TRRPBF
MGSF3454VT3 4.2A, 30V, 0.065ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, TSOP-6 onsemi MGSF3454VT1 vs MGSF3454VT3
IRFR4615PBF Power Field-Effect Transistor, 33A I(D), 150V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3 International Rectifier MGSF3454VT1 vs IRFR4615PBF
IRFR4615TRPBF Power Field-Effect Transistor, 33A I(D), 150V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3 Infineon Technologies AG MGSF3454VT1 vs IRFR4615TRPBF
IRFR4615TRRPBF Power Field-Effect Transistor, 33A I(D), 150V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3 International Rectifier MGSF3454VT1 vs IRFR4615TRRPBF
RTQ045N03TR Power Field-Effect Transistor, 4.5A I(D), 30V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TSMT6, 6 PIN ROHM Semiconductor MGSF3454VT1 vs RTQ045N03TR
MGSF3454VT3 Power Field-Effect Transistor, 4.2A I(D), 30V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TSOP-6 Motorola Semiconductor Products MGSF3454VT1 vs MGSF3454VT3
MGSF3454VT1 4.2A, 30V, 0.065ohm, N-CHANNEL, Si, POWER, MOSFET, TSOP-6 onsemi MGSF3454VT1 vs MGSF3454VT1
IRFR4615TRLPBF Power Field-Effect Transistor, 33A I(D), 150V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3 International Rectifier MGSF3454VT1 vs IRFR4615TRLPBF
RTQ045N03 Power Field-Effect Transistor, 4.5A I(D), 30V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TSMT, 6 PIN ROHM Semiconductor MGSF3454VT1 vs RTQ045N03

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