Datasheets
MII100-12A3 by:

Insulated Gate Bipolar Transistor, 135A I(C), 1200V V(BR)CES, N-Channel,

Part Details for MII100-12A3 by IXYS Corporation

Overview of MII100-12A3 by IXYS Corporation

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Applications Industrial Automation Renewable Energy Robotics and Drones

Price & Stock for MII100-12A3

Part # Distributor Description Stock Price Buy
DISTI # MII100-12A3
TTI IGBT Modules IGBT MODULE 1200V, 100A RoHS: Compliant pbFree: Pb-Free Min Qty: 6 Package Multiple: 6 Container: Box Americas - 0
Buy Now
DISTI # MII100-12A3
TME Module: IGBT, transistor/transistor, IGBT half-bridge, Ic: 90A Min Qty: 1 0
  • 1 $89.7200
  • 3 $79.2600
  • 6 $71.1700
$71.1700 / $89.7200 RFQ
DISTI # 2429723
element14 Asia-Pacific   RoHS: Compliant Min Qty: 1 Container: Each 0
  • 1 $83.3972
  • 12 $79.2203
  • 30 $77.1355
$77.1355 / $83.3972 Buy Now
DISTI # 2429723
Farnell IGBT MODULE, 2.2V, 135A RoHS: Compliant Min Qty: 1 Lead time: 51 Weeks, 1 Days Container: Each 0
  • 1 $70.2075
  • 5 $67.3275
  • 10 $64.4474
  • 50 $63.1590
$63.1590 / $70.2075 Buy Now

Part Details for MII100-12A3

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MII100-12A3 Part Data Attributes:

MII100-12A3 IXYS Corporation
Buy Now Datasheet
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MII100-12A3 IXYS Corporation Insulated Gate Bipolar Transistor, 135A I(C), 1200V V(BR)CES, N-Channel,
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer IXYS CORP
Reach Compliance Code compliant
ECCN Code EAR99
Case Connection ISOLATED
Collector Current-Max (IC) 135 A
Collector-Emitter Voltage-Max 1200 V
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X7
Number of Elements 2
Number of Terminals 7
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 625 W
Qualification Status Not Qualified
Reference Standard UL RECOGNIZED
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application MOTOR CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 700 ns
Turn-on Time-Nom (ton) 150 ns
VCEsat-Max 3 V

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