Part Details for MIMD10A-7-F by Diodes Incorporated
Overview of MIMD10A-7-F by Diodes Incorporated
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Internet of Things (IoT)
Smart Cities
Price & Stock for MIMD10A-7-F
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
MIMD10A-7-F
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Avnet Americas | Trans Digital BJT NPN/PNP 50V 100mA/500mA 6-Pin SOT-363 T/R - Tape and Reel (Alt: MIMD10A-7-F) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0 |
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RFQ |
Part Details for MIMD10A-7-F
MIMD10A-7-F CAD Models
MIMD10A-7-F Part Data Attributes
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MIMD10A-7-F
Diodes Incorporated
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Datasheet
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MIMD10A-7-F
Diodes Incorporated
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon, GREEN, PLASTIC PACKAGE-6
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | DIODES INC | |
Package Description | SMALL OUTLINE, R-PDSO-G6 | |
Pin Count | 6 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Diodes Incorporated | |
Additional Feature | BUILT IN BIAS RESISTOR RATIO 100 | |
Collector Current-Max (IC) | 0.1 A | |
Collector-Emitter Voltage-Max | 50 V | |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR | |
DC Current Gain-Min (hFE) | 100 | |
JESD-30 Code | R-PDSO-G6 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 2 | |
Number of Terminals | 6 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | NPN AND PNP | |
Power Dissipation-Max (Abs) | 0.2 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Transition Frequency-Nom (fT) | 250 MHz |