Datasheets
MIXA10WB1200TML by:

Insulated Gate Bipolar Transistor, 17A I(C), 1200V V(BR)CES, N-Channel, E1-PACK-25

Part Details for MIXA10WB1200TML by IXYS Corporation

Overview of MIXA10WB1200TML by IXYS Corporation

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Applications Energy and Power Systems Renewable Energy Medical Imaging Robotics and Drones

Price & Stock for MIXA10WB1200TML

Part # Distributor Description Stock Price Buy
DISTI # MIXA10WB1200TML-ND
DigiKey IGBT MODULE 1200V 17A 63W E1 Lead time: 20 Weeks Container: Box Temporarily Out of Stock
Buy Now
DISTI # 747-MIXA10WB1200TML
Mouser Electronics IGBT Modules Converter-Brake Inverter Module RoHS: Compliant 0
  • 1 $36.3100
  • 10 $30.8500
  • 20 $29.5300
  • 50 $28.6100
  • 100 $27.6900
  • 200 $25.8400
$25.8400 / $36.3100 Order Now
DISTI # MIXA10WB1200TML
TME Module: IGBT, diode/transistor, buck chopper, Urmax: 1.2kV, Ic: 12A Min Qty: 1 0
  • 1 $29.2500
  • 3 $25.9000
  • 10 $23.3000
$23.3000 / $29.2500 RFQ
New Advantage Corporation IGBT PIM MOD.3PH D.BRID.SEVEN 12A 1200V XPT E1PACK RoHS: Compliant Min Qty: 1 Package Multiple: 1 24
  • 8 $45.1300
  • 24 $42.1300
$42.1300 / $45.1300 Buy Now

Part Details for MIXA10WB1200TML

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MIXA10WB1200TML Part Data Attributes

MIXA10WB1200TML IXYS Corporation
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MIXA10WB1200TML IXYS Corporation Insulated Gate Bipolar Transistor, 17A I(C), 1200V V(BR)CES, N-Channel, E1-PACK-25
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer IXYS CORP
Package Description E1-PACK-25
Pin Count 25
Reach Compliance Code compliant
ECCN Code EAR99
Case Connection ISOLATED
Collector Current-Max (IC) 17 A
Collector-Emitter Voltage-Max 1200 V
Configuration COMPLEX
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X25
Number of Elements 7
Number of Terminals 25
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 63 W
Qualification Status Not Qualified
Reference Standard UL RECOGNIZED
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 350 ns
Turn-on Time-Nom (ton) 110 ns
VCEsat-Max 2.1 V

Alternate Parts for MIXA10WB1200TML

This table gives cross-reference parts and alternative options found for MIXA10WB1200TML. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MIXA10WB1200TML, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
MIXA20WB1200TML Insulated Gate Bipolar Transistor, 28A I(C), 1200V V(BR)CES, N-Channel, MODULE-25 IXYS Corporation MIXA10WB1200TML vs MIXA20WB1200TML

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