Datasheets
MIXA60W1200TED by:

Insulated Gate Bipolar Transistor, 85A I(C), 1200V V(BR)CES, N-Channel, SIXPACK, E2-PACK-28

Part Details for MIXA60W1200TED by IXYS Corporation

Overview of MIXA60W1200TED by IXYS Corporation

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Applications Industrial Automation

Price & Stock for MIXA60W1200TED

Part # Distributor Description Stock Price Buy
DISTI # MIXA60W1200TED-ND
DigiKey IGBT MODULE 1200V 85A 290W E2 Min Qty: 6 Lead time: 60 Weeks Container: Box Temporarily Out of Stock
  • 6 $84.3050
  • 12 $76.9625
  • 102 $69.6201
$69.6201 / $84.3050 Buy Now
DISTI # 747-MIXA60W1200TED
Mouser Electronics IGBT Modules Six-Pack XPT IGBT RoHS: Compliant 0
  • 1 $89.8400
  • 12 $80.3300
$80.3300 / $89.8400 Order Now
Future Electronics IGBT Modules Six-Pack XPT IGBT RoHS: Compliant pbFree: Yes Min Qty: 6 Package Multiple: 6 Container: Bulk 0
Bulk
  • 6 $77.7100
  • 12 $77.1300
  • 18 $76.7900
  • 30 $76.3600
  • 60 $75.4600
$75.4600 / $77.7100 Buy Now
Future Electronics IGBT Modules Six-Pack XPT IGBT RoHS: Compliant pbFree: Yes Min Qty: 6 Package Multiple: 6 Container: Bulk 0
Bulk
  • 6 $77.7100
  • 12 $77.1300
  • 18 $76.7900
  • 30 $76.3600
  • 60 $75.4600
$75.4600 / $77.7100 Buy Now
DISTI # MIXA60W1200TED
TTI IGBT Modules Six-Pack XPT IGBT Min Qty: 6 Package Multiple: 6 Container: Box Americas - 0
  • 6 $99.1000
$99.1000 Buy Now
DISTI # MIXA60W1200TED
TME Module: IGBT, transistor/transistor, IGBT three-phase bridge Min Qty: 1 0
  • 1 $105.3800
  • 3 $93.0500
  • 6 $83.6200
$83.6200 / $105.3800 RFQ

Part Details for MIXA60W1200TED

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MIXA60W1200TED Part Data Attributes

MIXA60W1200TED IXYS Corporation
Buy Now Datasheet
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MIXA60W1200TED IXYS Corporation Insulated Gate Bipolar Transistor, 85A I(C), 1200V V(BR)CES, N-Channel, SIXPACK, E2-PACK-28
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer IXYS CORP
Package Description SIXPACK, E2-PACK-28
Pin Count 28
Reach Compliance Code compliant
ECCN Code EAR99
Case Connection ISOLATED
Collector Current-Max (IC) 85 A
Collector-Emitter Voltage-Max 1200 V
Configuration BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X28
Number of Elements 6
Number of Terminals 28
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 290 W
Qualification Status Not Qualified
Reference Standard UL RECOGNIZED
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 350 ns
Turn-on Time-Nom (ton) 110 ns
VCEsat-Max 2.1 V

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