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Transistors / Power Bipolar Transistors / MJE3055T
Datasheets
MJE3055T by:

NPN power transistor

Part Details for MJE3055T by STMicroelectronics

Results Overview of MJE3055T by STMicroelectronics

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Applications Industrial Automation

MJE3055T Information

MJE3055T by STMicroelectronics is a Power Bipolar Transistor.
Power Bipolar Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for MJE3055T

Part # Distributor Description Stock Price Buy
DISTI # 34X0709
Newark Bipolar (Bjt) Single Transistor, Npn, 60 V, 2 Mhz, 75 W, 3 A, 400 Rohs Compliant: Yes |Stmicroelectronics MJE3055T RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 6049
  • 1 $1.2000
  • 10 $0.9990
  • 100 $0.7990
  • 500 $0.6930
  • 1,000 $0.5850
  • 2,500 $0.5570
  • 10,000 $0.5160
$0.5160 / $1.2000 Buy Now
DISTI # MJE3055T
Avnet Americas Transistor GP BJT NPN 60V 10A 3-Pin TO-220 Tube - Rail/Tube (Alt: MJE3055T) RoHS: Compliant Min Qty: 1000 Package Multiple: 1 Lead time: 45 Weeks, 0 Days Container: Tube 7000
  • 1,000 $0.2228
  • 1,100 $0.2216
  • 2,100 $0.2205
  • 5,000 $0.2194
  • 10,000 $0.2086
$0.2086 / $0.2228 Buy Now
STMicroelectronics Low voltage NPN power transistor RoHS: Compliant Min Qty: 1 4947
  • 1 $1.6300
  • 10 $0.7800
  • 100 $0.6900
  • 500 $0.5500
$0.5500 / $1.6300 Buy Now
Bristol Electronics   10
RFQ
DISTI # MJE3055T
TME Transistor: NPN, bipolar, 70V, 10A, 90W, TO220AB Min Qty: 1 214
  • 1 $1.0290
  • 10 $0.6190
  • 50 $0.6050
  • 100 $0.5540
  • 250 $0.5140
  • 500 $0.4470
  • 1,000 $0.4120
  • 2,000 $0.3830
  • 5,000 $0.3610
$0.3610 / $1.0290 Buy Now
DISTI # MJE3055T
Avnet Silica Transistor GP BJT NPN 60V 10A 3-Pin TO-220 Tube (Alt: MJE3055T) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 15 Weeks, 0 Days Silica - 0
Buy Now
DISTI # MJE3055T
EBV Elektronik Transistor GP BJT NPN 60V 10A 3-Pin TO-220 Tube (Alt: MJE3055T) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 15 Weeks, 0 Days EBV - 3050
Buy Now
LCSC 60V 75W 204A4V 10A NPN TO-220 Bipolar (BJT) ROHS 548
  • 1 $0.6205
  • 10 $0.5193
  • 30 $0.4688
  • 100 $0.4309
  • 500 $0.4005
  • 1,000 $0.3853
$0.3853 / $0.6205 Buy Now

Part Details for MJE3055T

MJE3055T CAD Models

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MJE3055T Part Data Attributes

Parametric Data
MJE3055T STMicroelectronics
Buy Now Datasheet
Compare Parts:
MJE3055T STMicroelectronics NPN power transistor
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer STMICROELECTRONICS
Part Package Code TO-220AB
Package Description TO-220, 3 PIN
Pin Count 3
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Factory Lead Time 45 Weeks
Samacsys Manufacturer STMicroelectronics
Collector Current-Max (IC) 10 A
Collector-Emitter Voltage-Max 60 V
Configuration SINGLE
DC Current Gain-Min (hFE) 5
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type NPN
Power Dissipation Ambient-Max 75 W
Power Dissipation-Max (Abs) 75 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Matte Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 2 MHz
VCEsat-Max 8 V

Alternate Parts for MJE3055T

This table gives cross-reference parts and alternative options found for MJE3055T. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MJE3055T, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
MJE2955TTU onsemi $0.3668 Bipolar Power Transistor, PNP, 10 A, 60 V, 75 Watt, 1000-TUBE MJE3055T vs MJE2955TTU

MJE3055T Related Parts

MJE3055T Frequently Asked Questions (FAQ)

  • The maximum safe operating area (SOA) for the MJE3055T is not explicitly stated in the datasheet. However, it can be estimated based on the transistor's thermal resistance, power dissipation, and voltage ratings. As a general guideline, the SOA can be assumed to be around 10-15W for a junction temperature of 150°C.

  • To ensure the MJE3055T is properly biased for linear operation, you should ensure that the base-emitter voltage (VBE) is around 0.7V, and the collector-emitter voltage (VCE) is around 1-2V. Additionally, the base current should be limited to around 1-2mA to prevent overheating.

  • The recommended heatsink design for the MJE3055T depends on the specific application and power dissipation requirements. However, as a general guideline, a heatsink with a thermal resistance of around 5-10°C/W is recommended. The heatsink should also be designed to provide good thermal contact with the transistor's tab.

  • While the MJE3055T is primarily designed for linear applications, it can be used in switching applications with some caution. However, the transistor's switching characteristics, such as its rise and fall times, may not be optimized for high-frequency switching. Additionally, the transistor's power dissipation capabilities should be carefully considered to prevent overheating.

  • To protect the MJE3055T from electrostatic discharge (ESD), it is recommended to handle the transistor by the body, rather than the leads. Additionally, an ESD protection device, such as a TVS diode, can be used to protect the transistor from ESD events.

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