There are no models available for this part yet.
Overview of MKE38P600LB-TRR by IXYS Corporation
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 4 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 0 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Available Datasheets
Part # | Manufacturer | Description | Datasheet |
---|---|---|---|
RJU1CF00DWA-00#W0 | Renesas Electronics Corporation | High-performance Fast Recovery Diodes with Low VF and High-speed trr for Increasing Device Efficiency | |
RJU65F25DWA-00#W0 | Renesas Electronics Corporation | High-performance Fast Recovery Diodes with Low VF and High-speed trr for Increasing Device Efficiency | |
RJU1CF07DWA-00#W0 | Renesas Electronics Corporation | High-performance Fast Recovery Diodes with Low VF and High-speed trr for Increasing Device Efficiency |
Price & Stock for MKE38P600LB-TRR by IXYS Corporation
Part # | Manufacturer | Description | Stock | Price | Buy | ||
---|---|---|---|---|---|---|---|
DISTI #
MKE38P600LB-TRR-ND
|
DigiKey | MOSFET N-CH 600V 50A SMPD Min Qty: 200 Lead time: 76 Weeks Container: Tape & Reel (TR) | Temporarily Out of Stock |
|
$46.4408 | Buy Now | |
DISTI #
747-MKE38P600LB-TRR
|
Mouser Electronics | MOSFETs SMPD MOSFETs | 0 |
|
$46.4500 | Order Now | |
Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 200 Package Multiple: 200 Lead time: 28 Weeks | 0 |
|
$34.7000 | Buy Now | ||
DISTI #
MKE38P600LB-TRR
|
TTI | MOSFETs SMPD MOSFETs Min Qty: 200 Package Multiple: 200 Container: Reel | Americas - 0 |
|
$45.9900 | Buy Now |
CAD Models for MKE38P600LB-TRR by IXYS Corporation
Part Data Attributes for MKE38P600LB-TRR by IXYS Corporation
|
|
---|---|
Pbfree Code
|
Yes
|
Part Life Cycle Code
|
Transferred
|
Ihs Manufacturer
|
IXYS CORP
|
Package Description
|
,
|
Reach Compliance Code
|
unknown
|
ECCN Code
|
EAR99
|
Additional Feature
|
HIGH RELIABILITY
|
Avalanche Energy Rating (Eas)
|
1950 mJ
|
Case Connection
|
ISOLATED
|
Configuration
|
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min
|
600 V
|
Drain Current-Max (ID)
|
50 A
|
Drain-source On Resistance-Max
|
0.045 Ω
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code
|
R-PDSO-G9
|
Number of Elements
|
2
|
Number of Terminals
|
9
|
Operating Mode
|
ENHANCEMENT MODE
|
Operating Temperature-Max
|
150 °C
|
Operating Temperature-Min
|
-55 °C
|
Package Body Material
|
PLASTIC/EPOXY
|
Package Shape
|
RECTANGULAR
|
Package Style
|
SMALL OUTLINE
|
Polarity/Channel Type
|
N-CHANNEL
|
Reference Standard
|
UL RECOGNIZED
|
Surface Mount
|
YES
|
Terminal Form
|
GULL WING
|
Terminal Position
|
DUAL
|
Transistor Application
|
SWITCHING
|
Transistor Element Material
|
SILICON
|