MKE38P600LB-TRR
Description: MOSFET N-CH 600V 50A SMPD

Overview of MKE38P600LB-TRR by IXYS Corporation

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
  • Distributor Offerings: ( 4 listings )
  • Number of FFF Equivalents: ( 0 replacements )
  • CAD Models: ( Request Part )
  • Number of Functional Equivalents: ( 0 options )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )

Available Datasheets

Part # Manufacturer Description Datasheet
RJU1CF00DWA-00#W0 Renesas Electronics Corporation High-performance Fast Recovery Diodes with Low VF and High-speed trr for Increasing Device Efficiency
RJU65F25DWA-00#W0 Renesas Electronics Corporation High-performance Fast Recovery Diodes with Low VF and High-speed trr for Increasing Device Efficiency
RJU1CF07DWA-00#W0 Renesas Electronics Corporation High-performance Fast Recovery Diodes with Low VF and High-speed trr for Increasing Device Efficiency

Price & Stock for MKE38P600LB-TRR by IXYS Corporation

Part # Manufacturer Description Stock Price Buy
DISTI # MKE38P600LB-TRR-ND
DigiKey MOSFET N-CH 600V 50A SMPD Min Qty: 200 Lead time: 76 Weeks Container: Tape & Reel (TR) Temporarily Out of Stock
  • 200 $46.4408
$46.4408 Buy Now
DISTI # 747-MKE38P600LB-TRR
Mouser Electronics MOSFETs SMPD MOSFETs 0
  • 200 $46.4500
$46.4500 Order Now
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 200 Package Multiple: 200 Lead time: 28 Weeks 0
  • 200 $34.7000
$34.7000 Buy Now
DISTI # MKE38P600LB-TRR
TTI MOSFETs SMPD MOSFETs Min Qty: 200 Package Multiple: 200 Container: Reel Americas - 0
  • 200 $45.9900
$45.9900 Buy Now

CAD Models for MKE38P600LB-TRR by IXYS Corporation
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Part Data Attributes for MKE38P600LB-TRR by IXYS Corporation

MKE38P600LB-TRR
IXYS Corporation
-
-
Pbfree Code
Yes
Part Life Cycle Code
Transferred
Ihs Manufacturer
IXYS CORP
Package Description
,
Reach Compliance Code
unknown
ECCN Code
EAR99
Additional Feature
HIGH RELIABILITY
Avalanche Energy Rating (Eas)
1950 mJ
Case Connection
ISOLATED
Configuration
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
600 V
Drain Current-Max (ID)
50 A
Drain-source On Resistance-Max
0.045 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PDSO-G9
Number of Elements
2
Number of Terminals
9
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Operating Temperature-Min
-55 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
Reference Standard
UL RECOGNIZED
Surface Mount
YES
Terminal Form
GULL WING
Terminal Position
DUAL
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Want to compare parts?
  1. MKE38P600LB-TRR
    IXYS Corporation
    MOSFET N-CH 600V 50A SMPD
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