Part Details for MKE38P600LB-TRR by Littelfuse Inc
Overview of MKE38P600LB-TRR by Littelfuse Inc
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| RJU1CF00DWA-00#W0 | Renesas Electronics Corporation | High-performance Fast Recovery Diodes with Low VF and High-speed trr for Increasing Device Efficiency | |
| RJU65F25DWA-00#W0 | Renesas Electronics Corporation | High-performance Fast Recovery Diodes with Low VF and High-speed trr for Increasing Device Efficiency | |
| RJU1CF07DWA-00#W0 | Renesas Electronics Corporation | High-performance Fast Recovery Diodes with Low VF and High-speed trr for Increasing Device Efficiency |
Price & Stock for MKE38P600LB-TRR
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
03AH2640
|
Newark | Mosfet Module - Others Smpd-B/ Tr |Littelfuse MKE38P600LB-TRR RoHS: Not Compliant Min Qty: 200 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
$44.6200 / $45.9900 | Buy Now |
Part Details for MKE38P600LB-TRR
MKE38P600LB-TRR CAD Models
MKE38P600LB-TRR Part Data Attributes
|
|
MKE38P600LB-TRR
Littelfuse Inc
Buy Now
Datasheet
|
Compare Parts:
MKE38P600LB-TRR
Littelfuse Inc
Power Field-Effect Transistor,
|
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | LITTELFUSE INC | |
| Package Description | , | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | LITTELFUSE | |
| Additional Feature | HIGH RELIABILITY | |
| Avalanche Energy Rating (Eas) | 1950 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 50 A | |
| Drain-source On Resistance-Max | 0.045 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G9 | |
| Number of Elements | 2 | |
| Number of Terminals | 9 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Reference Standard | UL RECOGNIZED | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |