Datasheets
MMBT3906 by:

Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB

Part Details for MMBT3906 by National Semiconductor Corporation

Overview of MMBT3906 by National Semiconductor Corporation

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Applications Consumer Electronics Audio and Video Systems

Price & Stock for MMBT3906

Part # Distributor Description Stock Price Buy
Bristol Electronics   Min Qty: 89 7110
  • 89 $0.0563
  • 268 $0.0375
  • 935 $0.0094
$0.0094 / $0.0563 Buy Now
Bristol Electronics   Min Qty: 35 157
  • 35 $0.1462
  • 104 $0.0731
$0.0731 / $0.1462 Buy Now
Bristol Electronics   15000
RFQ
Quest Components Bipolar Junction Transistor, PNP Type, SOT-23 5719
  • 1 $0.0720
  • 445 $0.0270
  • 1,853 $0.0135
$0.0135 / $0.0720 Buy Now
Quest Components Bipolar Junction Transistor, PNP Type, SOT-23 5688
  • 1 $0.0750
  • 401 $0.0250
  • 2,001 $0.0075
$0.0075 / $0.0750 Buy Now
Quest Components Bipolar Junction Transistor, PNP Type, SOT-23 12000
  • 1 $0.1350
  • 1,112 $0.0270
  • 7,408 $0.0180
$0.0180 / $0.1350 Buy Now
Chip 1 Exchange INSTOCK 50600
RFQ
Component Electronics, Inc IN STOCK SHIP TODAY 650
  • 1 $0.6200
  • 100 $0.4600
  • 1,000 $0.4000
$0.4000 / $0.6200 Buy Now

Part Details for MMBT3906

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MMBT3906 Part Data Attributes

MMBT3906 National Semiconductor Corporation
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MMBT3906 National Semiconductor Corporation Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer NATIONAL SEMICONDUCTOR CORP
Reach Compliance Code compliant
Additional Feature HIGH SPEED SATURATED SWITCHING
Collector Current-Max (IC) 0.2 A
Collector-Base Capacitance-Max 4.5 pF
Collector-Emitter Voltage-Max 40 V
Configuration SINGLE
DC Current Gain-Min (hFE) 30
JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type PNP
Power Dissipation Ambient-Max 0.35 W
Power Dissipation-Max (Abs) 0.225 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 250 MHz
Turn-off Time-Max (toff) 300 ns
Turn-on Time-Max (ton) 70 ns
VCEsat-Max 0.4 V

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