Datasheets
MMBT4403 by:

Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB

Part Details for MMBT4403 by National Semiconductor Corporation

Overview of MMBT4403 by National Semiconductor Corporation

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Price & Stock for MMBT4403

Part # Distributor Description Stock Price Buy
Bristol Electronics   Min Qty: 56 145
  • 56 $0.0900
$0.0900 Buy Now
Bristol Electronics   6000
RFQ
Bristol Electronics   5439
RFQ
Quest Components Bipolar Junction Transistor, PNP Type, SOT-23 2177
  • 1 $0.0600
  • 223 $0.0375
  • 1,334 $0.0270
$0.0270 / $0.0600 Buy Now
Quest Components Bipolar Junction Transistor, PNP Type, SOT-23 116
  • 1 $0.1200
  • 43 $0.0800
$0.0800 / $0.1200 Buy Now
Quest Components Bipolar Junction Transistor, PNP Type, SOT-23 4800
  • 1 $0.1500
  • 84 $0.0675
  • 742 $0.0450
$0.0450 / $0.1500 Buy Now
Quest Components Bipolar Junction Transistor, PNP Type, SOT-23 2880
  • 1 $0.5140
  • 196 $0.2570
  • 779 $0.2056
$0.2056 / $0.5140 Buy Now
Component Electronics, Inc IN STOCK SHIP TODAY 2800
  • 1 $0.3800
  • 100 $0.2900
  • 1,000 $0.2500
$0.2500 / $0.3800 Buy Now

Part Details for MMBT4403

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MMBT4403 Part Data Attributes

MMBT4403 National Semiconductor Corporation
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MMBT4403 National Semiconductor Corporation Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer NATIONAL SEMICONDUCTOR CORP
Reach Compliance Code compliant
Additional Feature HIGH SPEED SATURATED SWITCHING
Collector Current-Max (IC) 0.6 A
Collector-Base Capacitance-Max 8.5 pF
Collector-Emitter Voltage-Max 40 V
Configuration SINGLE
DC Current Gain-Min (hFE) 100
JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type PNP
Power Dissipation Ambient-Max 0.35 W
Power Dissipation-Max (Abs) 0.225 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 200 MHz
Turn-off Time-Max (toff) 255 ns
Turn-on Time-Max (ton) 35 ns
VCEsat-Max 0.4 V

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