Datasheets
MMBT5551LT1 by:

Transistor

Part Details for MMBT5551LT1 by Bytesonic Corporation

Overview of MMBT5551LT1 by Bytesonic Corporation

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Part Details for MMBT5551LT1

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MMBT5551LT1 Part Data Attributes:

MMBT5551LT1 Bytesonic Corporation
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MMBT5551LT1 Bytesonic Corporation Transistor
Part Life Cycle Code Contact Manufacturer
Ihs Manufacturer BYTESONIC ELECTRONICS CO LTD
Reach Compliance Code unknown
ECCN Code EAR99
Collector Current-Max (IC) 0.6 A
Collector-Emitter Voltage-Max 160 V
Configuration SINGLE
DC Current Gain-Min (hFE) 30
JESD-30 Code R-PDSO-G3
Number of Elements 1
Number of Terminals 3
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type NPN
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application AMPLIFIER
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 100 MHz

Alternate Parts for MMBT5551LT1

This table gives cross-reference parts and alternative options found for MMBT5551LT1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MMBT5551LT1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
2N5551 Small Signal Bipolar Transistor, NTE Electronics Inc MMBT5551LT1 vs 2N5551
MMBT5551 Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, Yangzhou Yangjie Electronics Co Ltd MMBT5551LT1 vs MMBT5551
CXT5551 Small Signal Bipolar Transistor, Galaxy Semi-Conductor Co Ltd MMBT5551LT1 vs CXT5551
2N5551 Small Signal Bipolar Transistor, Taitron Components Inc MMBT5551LT1 vs 2N5551
MMBT5551 Small Signal Bipolar Transistor, Suzhou Good-Ark Electronics Co Ltd MMBT5551LT1 vs MMBT5551
CXT5551 General Purpose NPN Bipolar Transistor; Polarity: NPN; V(BR)CEO Min (V): 160V; IC (A): 0.6A; HFE Min: 80; HFE Max: 250; VCE (V): 5V; IC (mA): 10mA; VCE(SAT) (V): 0.2V; IC (mA)1: 50mA; IB (mA): 5mA; FT Min (MHz): 100 MHz; PTM Max (W): 0.5W; Package: SOT-89; package_code: SOT-89; mfr_package_code: SOT-89 Galaxy Microelectronics MMBT5551LT1 vs CXT5551
MMBT5551V Small Signal Bipolar Transistor, Rectron Semiconductor MMBT5551LT1 vs MMBT5551V
MMBT5551F2 Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, Yangzhou Yangjie Electronics Co Ltd MMBT5551LT1 vs MMBT5551F2
MMBT5551-Q Small Signal Bipolar Transistor, Diotec Semiconductor AG MMBT5551LT1 vs MMBT5551-Q
MMBT5551 Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN Infinex MMBT5551LT1 vs MMBT5551

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