Datasheets
MMBTA13 by:

Small Signal Bipolar Transistor, 0.3A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB

Part Details for MMBTA13 by National Semiconductor Corporation

Overview of MMBTA13 by National Semiconductor Corporation

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for MMBTA13

Part # Distributor Description Stock Price Buy
Quest Components Bipolar Junction Transistor, Darlington, NPN Type, SOT-23 1656
  • 1 $0.0520
  • 257 $0.0325
  • 1,539 $0.0234
$0.0234 / $0.0520 Buy Now
Component Electronics, Inc IN STOCK SHIP TODAY 3000
  • 1 $0.3800
  • 100 $0.2900
  • 1,000 $0.2500
$0.2500 / $0.3800 Buy Now

Part Details for MMBTA13

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MMBTA13 Part Data Attributes

MMBTA13 National Semiconductor Corporation
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MMBTA13 National Semiconductor Corporation Small Signal Bipolar Transistor, 0.3A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer NATIONAL SEMICONDUCTOR CORP
Reach Compliance Code compliant
Collector Current-Max (IC) 0.3 A
Collector-Base Capacitance-Max 6 pF
Collector-Emitter Voltage-Max 30 V
Configuration DARLINGTON
DC Current Gain-Min (hFE) 10000
JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type NPN
Power Dissipation Ambient-Max 0.35 W
Power Dissipation-Max (Abs) 0.225 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form GULL WING
Terminal Position DUAL
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 125 MHz
VCEsat-Max 1.5 V

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