Datasheets
MMDF2C03HD by:

TRANSISTOR,MOSFET,PAIR,COMPLEMENTARY,30V V(BR)DSS,3A I(D),SO

Part Details for MMDF2C03HD by Freescale Semiconductor

Overview of MMDF2C03HD by Freescale Semiconductor

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Part Details for MMDF2C03HD

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MMDF2C03HD Part Data Attributes

MMDF2C03HD Freescale Semiconductor
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MMDF2C03HD Freescale Semiconductor TRANSISTOR,MOSFET,PAIR,COMPLEMENTARY,30V V(BR)DSS,3A I(D),SO
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer MOTOROLA SEMICONDUCTOR PRODUCTS
Package Description SMALL OUTLINE, R-PDSO-G8
Reach Compliance Code unknown
Avalanche Energy Rating (Eas) 324 mJ
Configuration SEPARATE, 2 ELEMENTS
DS Breakdown Voltage-Min 30 V
Drain Current-Max (Abs) (ID) 3 A
Drain Current-Max (ID) 2 A
Drain-source On Resistance-Max 0.09 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
JESD-609 Code e0
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Power Dissipation-Max (Abs) 1.5 W
Pulsed Drain Current-Max (IDM) 21 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

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