Datasheets
MMDF2C03HD by:

Power Field-Effect Transistor, 2A I(D), 30V, 0.09ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, CASE 751-05, SOIC-8

Part Details for MMDF2C03HD by Motorola Semiconductor Products

Overview of MMDF2C03HD by Motorola Semiconductor Products

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Applications Industrial Automation Energy and Power Systems Renewable Energy

Part Details for MMDF2C03HD

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MMDF2C03HD Part Data Attributes

MMDF2C03HD Motorola Semiconductor Products
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MMDF2C03HD Motorola Semiconductor Products Power Field-Effect Transistor, 2A I(D), 30V, 0.09ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, CASE 751-05, SOIC-8
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer MOTOROLA INC
Package Description CASE 751-05, SOIC-8
Reach Compliance Code unknown
ECCN Code EAR99
Avalanche Energy Rating (Eas) 324 mJ
Configuration SEPARATE, 2 ELEMENTS
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 2 A
Drain-source On Resistance-Max 0.09 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
JESD-609 Code e0
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Power Dissipation-Max (Abs) 1.5 W
Pulsed Drain Current-Max (IDM) 21 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN LEAD
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for MMDF2C03HD

This table gives cross-reference parts and alternative options found for MMDF2C03HD. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MMDF2C03HD, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
MMDF2C03HDR2G Power MOSFET 30V 4.1 A 70 mOhm Dual Complementary SO-8, SOIC-8 Narrow Body, 2500-REEL onsemi MMDF2C03HD vs MMDF2C03HDR2G
Part Number Description Manufacturer Compare
IRF7509TR Small Signal Field-Effect Transistor, 2.7A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8 Infineon Technologies AG MMDF2C03HD vs IRF7509TR
IRF9952TR Power Field-Effect Transistor, 3.5A I(D), 30V, 0.1ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET International Rectifier MMDF2C03HD vs IRF9952TR
NTMD2C02R2SG 5.2A, 20V, 0.043ohm, 2 CHANNEL,N AND P-CHANNEL, Si, POWER, MOSFET, LEAD FREE, CASE 751-07, SOIC-8 Rochester Electronics LLC MMDF2C03HD vs NTMD2C02R2SG
IRF7317TRPBF Power Field-Effect Transistor, 6.6A I(D), 20V, 0.029ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, International Rectifier MMDF2C03HD vs IRF7317TRPBF
NDS9942 TRANSISTOR 3 A, 20 V, 0.125 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power National Semiconductor Corporation MMDF2C03HD vs NDS9942
NDS9958D84Z Power Field-Effect Transistor, 3.5A I(D), 20V, 0.1ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Fairchild Semiconductor Corporation MMDF2C03HD vs NDS9958D84Z
IRF9952TRPBF Power Field-Effect Transistor, 3.5A I(D), 30V, 0.1ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, International Rectifier MMDF2C03HD vs IRF9952TRPBF
AUIRF9952QTR Power Field-Effect Transistor, 2.8A I(D), 30V, 0.1ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, ROHS COMPLIANT, SOP-8 International Rectifier MMDF2C03HD vs AUIRF9952QTR
IRF7105TRPBF Power Field-Effect Transistor, 3.5A I(D), 25V, 0.1ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 International Rectifier MMDF2C03HD vs IRF7105TRPBF
HAT3004R Power Field-Effect Transistor, 0.15ohm, N-Channel and P-Channel, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 Hitachi Ltd MMDF2C03HD vs HAT3004R

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