Datasheets
MMDF2C03HDR2 by:

4.1A, 30V, 0.07ohm, 2 CHANNEL,N AND P-CHANNEL, Si, POWER, MOSFET, MINIATURE, CASE 751-07, SO-8

Part Details for MMDF2C03HDR2 by onsemi

Overview of MMDF2C03HDR2 by onsemi

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Applications Industrial Automation Energy and Power Systems Renewable Energy

Part Details for MMDF2C03HDR2

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MMDF2C03HDR2 Part Data Attributes

MMDF2C03HDR2 onsemi
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MMDF2C03HDR2 onsemi 4.1A, 30V, 0.07ohm, 2 CHANNEL,N AND P-CHANNEL, Si, POWER, MOSFET, MINIATURE, CASE 751-07, SO-8
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer ON SEMICONDUCTOR
Part Package Code SOT
Package Description MINIATURE, CASE 751-07, SO-8
Pin Count 8
Manufacturer Package Code CASE 751-07
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Samacsys Manufacturer onsemi
Avalanche Energy Rating (Eas) 324 mJ
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 4.1 A
Drain-source On Resistance-Max 0.07 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
JESD-609 Code e0
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 235
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Power Dissipation-Max (Abs) 2 W
Pulsed Drain Current-Max (IDM) 21 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN LEAD
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for MMDF2C03HDR2

This table gives cross-reference parts and alternative options found for MMDF2C03HDR2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MMDF2C03HDR2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
MMDF2C03HD 2A, 30V, 0.09ohm, 2 CHANNEL,N AND P-CHANNEL, Si, POWER, MOSFET, CASE 751-05, SOIC-8 Motorola Mobility LLC MMDF2C03HDR2 vs MMDF2C03HD
MMDF2C03HDR2G Power MOSFET 30V 4.1 A 70 mOhm Dual Complementary SO-8, SOIC-8 Narrow Body, 2500-REEL onsemi MMDF2C03HDR2 vs MMDF2C03HDR2G
MMDF2C03HD Power Field-Effect Transistor, 2A I(D), 30V, 0.09ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, CASE 751-05, SOIC-8 Motorola Semiconductor Products MMDF2C03HDR2 vs MMDF2C03HD
Part Number Description Manufacturer Compare
RF1K49224 3.5A, 30V, 0.132ohm, 2 CHANNEL,N AND P-CHANNEL, Si, POWER, MOSFET, MS-012AA Intersil Corporation MMDF2C03HDR2 vs RF1K49224
NDS9958S62Z Power Field-Effect Transistor, 3.5A I(D), 20V, 0.1ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Fairchild Semiconductor Corporation MMDF2C03HDR2 vs NDS9958S62Z
IRF9952PBF Power Field-Effect Transistor, 3.5A I(D), 30V, 0.1ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-Oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 Infineon Technologies AG MMDF2C03HDR2 vs IRF9952PBF
IRF7317PBF Power Field-Effect Transistor, 6.6A I(D), 20V, 0.029ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 International Rectifier MMDF2C03HDR2 vs IRF7317PBF
IRF9952 Power Field-Effect Transistor, 3.5A I(D), 30V, 0.1ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, Infineon Technologies AG MMDF2C03HDR2 vs IRF9952
IRF7105TRPBF Power Field-Effect Transistor, 3.5A I(D), 25V, 0.1ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, SOP-8 Infineon Technologies AG MMDF2C03HDR2 vs IRF7105TRPBF
IRF7105TR Power Field-Effect Transistor, 3.5A I(D), 25V, 0.1ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 International Rectifier MMDF2C03HDR2 vs IRF7105TR
AUIRF9952QTR Power Field-Effect Transistor, 2.8A I(D), 30V, 0.1ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-Oxide Semiconductor FET, MS-012AA, ROHS COMPLIANT, SOP-8 Infineon Technologies AG MMDF2C03HDR2 vs AUIRF9952QTR
HAT3004R Power Field-Effect Transistor, 0.15ohm, N-Channel and P-Channel, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 Hitachi Ltd MMDF2C03HDR2 vs HAT3004R
MMDF2C03HD 2A, 30V, 0.09ohm, 2 CHANNEL,N AND P-CHANNEL, Si, POWER, MOSFET, CASE 751-05, SOIC-8 Motorola Mobility LLC MMDF2C03HDR2 vs MMDF2C03HD

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