Part Details for MMDF2N02ER2 by Motorola Semiconductor Products
Overview of MMDF2N02ER2 by Motorola Semiconductor Products
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- Number of FFF Equivalents:
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- Number of Functional Equivalents:
- Part Data Attributes
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Price & Stock for MMDF2N02ER2
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 2497 |
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RFQ | ||
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Quest Components | 3.6 A, 25 V, 0.1 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET | 2388 |
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$0.6285 / $2.0950 | Buy Now |
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Quest Components | 3.6 A, 25 V, 0.1 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET | 80 |
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$1.2500 / $2.5000 | Buy Now |
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Quest Components | 3.6 A, 25 V, 0.1 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET | 2323 |
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$0.6160 / $2.2400 | Buy Now |
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Quest Components | 3.6 A, 25 V, 0.1 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET | 1997 |
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$1.6800 / $3.3600 | Buy Now |
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ComSIT USA | 2 AMPS, 25 VOLTS POWER MOSFET Power Field-Effect Transistor, 3.6A I(D), 25V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Not Compliant | Europe - 4174 |
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RFQ | |
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Component Electronics, Inc | IN STOCK SHIP TODAY | 25 |
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$0.5000 / $0.7700 | Buy Now |
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Perfect Parts Corporation | 1251 |
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RFQ |
Part Details for MMDF2N02ER2
MMDF2N02ER2 CAD Models
MMDF2N02ER2 Part Data Attributes
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MMDF2N02ER2
Motorola Semiconductor Products
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Datasheet
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MMDF2N02ER2
Motorola Semiconductor Products
Power Field-Effect Transistor, 3.6A I(D), 25V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
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Rohs Code | No | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | MOTOROLA INC | |
Package Description | SMALL OUTLINE, R-PDSO-G8 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Additional Feature | LOGIC LEVEL COMPATIBLE | |
Avalanche Energy Rating (Eas) | 245 mJ | |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 25 V | |
Drain Current-Max (ID) | 3.6 A | |
Drain-source On Resistance-Max | 0.1 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G8 | |
JESD-609 Code | e0 | |
Number of Elements | 2 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 18 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Tin/Lead (Sn/Pb) | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 140 ns | |
Turn-on Time-Max (ton) | 40 ns |