MMDF2P01HD
Description: Power Field-Effect Transistor, 2A I(D), 12V, 0.2ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, CASE 751-05, SOIC-8

Overview of MMDF2P01HD by Motorola Semiconductor Products

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Price & Stock for MMDF2P01HD by Motorola Semiconductor Products

Part # Manufacturer Description Stock Price Buy
Bristol Electronics   1013
RFQ

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Part Data Attributes for MMDF2P01HD by Motorola Semiconductor Products

MMDF2P01HD
Motorola Semiconductor Products
-
-
Rohs Code
No
Part Life Cycle Code
Obsolete
Ihs Manufacturer
MOTOROLA INC
Package Description
SMALL OUTLINE, R-PDSO-G8
Reach Compliance Code
unknown
ECCN Code
EAR99
Configuration
SEPARATE, 2 ELEMENTS
DS Breakdown Voltage-Min
12 V
Drain Current-Max (ID)
2 A
Drain-source On Resistance-Max
0.2 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PDSO-G8
JESD-609 Code
e0
Number of Elements
2
Number of Terminals
8
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Polarity/Channel Type
P-CHANNEL
Power Dissipation-Max (Abs)
1.5 W
Pulsed Drain Current-Max (IDM)
17 A
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
TIN LEAD
Terminal Form
GULL WING
Terminal Position
DUAL
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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  1. MMDF2P01HD
    Motorola Semiconductor Products
    Power Field-Effect Transistor, 2A I(D), 12V, 0.2ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, CASE 751-05, SOIC-8
    VS

Alternate Parts for MMDF2P01HD

This table gives cross-reference parts and alternative options found for MMDF2P01HD. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MMDF2P01HD, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
MMDF2P01HDR2 2A, 12V, 0.2ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, SO-8 Motorola Mobility LLC MMDF2P01HD vs MMDF2P01HDR2
MMDF2P01HDR2 3.4A, 12V, 0.18ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, SO-8 onsemi MMDF2P01HD vs MMDF2P01HDR2
Part Number Description Manufacturer Compare
FDS4935A Power Field-Effect Transistor, 7A I(D), 30V, 0.023ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Fairchild Semiconductor Corporation MMDF2P01HD vs FDS4935A
MMDF3N02HD Power Field-Effect Transistor, 3.8A I(D), 20V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, CASE 751-05, SOIC-8 Motorola Semiconductor Products MMDF2P01HD vs MMDF3N02HD
IRF7101TRPBF Power Field-Effect Transistor, 3.5A I(D), 20V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8 International Rectifier MMDF2P01HD vs IRF7101TRPBF
IRF7306TRPBF Power Field-Effect Transistor, 3A I(D), 30V, 0.1ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, International Rectifier MMDF2P01HD vs IRF7306TRPBF
IRF7416TRPBF Power Field-Effect Transistor, 10A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 International Rectifier MMDF2P01HD vs IRF7416TRPBF
IRF7404PBF-1 Power Field-Effect Transistor, International Rectifier MMDF2P01HD vs IRF7404PBF-1
IRF7406PBF Power Field-Effect Transistor, 6.7A I(D), 30V, 0.045ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 International Rectifier MMDF2P01HD vs IRF7406PBF
MMDF2N02E Power Field-Effect Transistor, 3.6A I(D), 25V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, CASE 751-05, SOIC-8 Motorola Semiconductor Products MMDF2P01HD vs MMDF2N02E
IRF7416QPBF Power Field-Effect Transistor, 10A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SOP-8 International Rectifier MMDF2P01HD vs IRF7416QPBF
IRF7406TRPBF Power Field-Effect Transistor, 6.7A I(D), 30V, 0.045ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, International Rectifier MMDF2P01HD vs IRF7406TRPBF

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