Part Details for MMDF3N03HD by Freescale Semiconductor
Overview of MMDF3N03HD by Freescale Semiconductor
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Part Details for MMDF3N03HD
MMDF3N03HD CAD Models
MMDF3N03HD Part Data Attributes
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MMDF3N03HD
Freescale Semiconductor
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Datasheet
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MMDF3N03HD
Freescale Semiconductor
TRANSISTOR,MOSFET,MATCHED PAIR,N-CHANNEL,30V V(BR)DSS,3A I(D),SO
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | MOTOROLA SEMICONDUCTOR PRODUCTS | |
Package Description | SMALL OUTLINE, R-PDSO-G8 | |
Reach Compliance Code | unknown | |
Avalanche Energy Rating (Eas) | 324 mJ | |
Configuration | SEPARATE, 2 ELEMENTS | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (Abs) (ID) | 3 A | |
Drain Current-Max (ID) | 2.8 A | |
Drain-source On Resistance-Max | 0.09 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G8 | |
JESD-609 Code | e0 | |
Number of Elements | 2 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 1.5 W | |
Pulsed Drain Current-Max (IDM) | 40 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Tin/Lead (Sn/Pb) | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |