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Part Details for MRFE6VS25LR5 by NXP Semiconductors
Results Overview of MRFE6VS25LR5 by NXP Semiconductors
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Industrial Automation
MRFE6VS25LR5 Information
MRFE6VS25LR5 by NXP Semiconductors is an RF Power Field-Effect Transistor.
RF Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for MRFE6VS25LR5
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
47W6731
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Newark | Wideband Rf Power Ldmos Transistor, 1.8-2000 Mhz, 25 W, 50 V/ Reel Rohs Compliant: Yes |Nxp MRFE6VS25LR5 RoHS: Compliant Min Qty: 50 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$72.3800 / $76.8000 | Buy Now |
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DISTI #
MRFE6VS25LR5
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Avnet Americas | Transistor RF FET N-CH 133V 1.8MHz to 2000MHz 2-Pin NI-360H T/R - Tape and Reel (Alt: MRFE6VS25LR5) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Container: Reel | 0 |
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$65.1945 / $67.4055 | Buy Now |
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DISTI #
MRFE6VS25LR5
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Richardson RFPD | RF POWER TRANSISTOR RoHS: Compliant Min Qty: 50 | 0 |
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$75.9500 | Buy Now |
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DISTI #
MRFE6VS25LR5
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Avnet Silica | Transistor RF FET NCH 133V 18MHz to 2000MHz 2Pin NI360H TR (Alt: MRFE6VS25LR5) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 54 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
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DISTI #
MRFE6VS25LR5
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EBV Elektronik | Transistor RF FET NCH 133V 18MHz to 2000MHz 2Pin NI360H TR (Alt: MRFE6VS25LR5) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 54 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for MRFE6VS25LR5
MRFE6VS25LR5 CAD Models
MRFE6VS25LR5 Part Data Attributes
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MRFE6VS25LR5
NXP Semiconductors
Buy Now
Datasheet
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Compare Parts:
MRFE6VS25LR5
NXP Semiconductors
RF POWER, FET
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| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | NXP SEMICONDUCTORS | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00 | |
| Samacsys Manufacturer | NXP | |
| Case Connection | SOURCE | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 133 V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Highest Frequency Band | ULTRA HIGH FREQUENCY BAND | |
| JESD-30 Code | R-PDFM-F2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -40 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Gain-Min (Gp) | 24.5 dB | |
| Surface Mount | YES | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Transistor Element Material | SILICON |