Datasheets
MSC015SMA070S by:

Power Field-Effect Transistor, 126A I(D), 700V, 0.019ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-268AA

Part Details for MSC015SMA070S by Microchip Technology Inc

Overview of MSC015SMA070S by Microchip Technology Inc

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Applications Industrial Automation Energy and Power Systems Renewable Energy

Price & Stock for MSC015SMA070S

Part # Distributor Description Stock Price Buy
DISTI # 78AH6551
Newark Mosfet Sic 700 V 15 Mohm To-268 2 To-268 Tube Rohs Compliant: Yes |Microchip MSC015SMA070S Min Qty: 30 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 10 $33.8400
  • 100 $29.4400
  • 500 $27.4600
$27.4600 / $33.8400 Buy Now
DISTI # 691-MSC015SMA070S-ND
DigiKey SICFET N-CH 700V 126A D3PAK Min Qty: 1 Lead time: 12 Weeks Container: Tube Temporarily Out of Stock
  • 1 $36.6900
  • 25 $33.8400
  • 100 $27.4625
$27.4625 / $36.6900 Buy Now
DISTI # MSC015SMA070S
Avnet Americas Silicon Carbide Power MOSFET N-Channel 700V 131A 3-Pin TO-268 - Rail/Tube (Alt: MSC015SMA070S) RoHS: Not Compliant Min Qty: 30 Package Multiple: 30 Lead time: 12 Weeks, 0 Days Container: Tube 0
  • 1 $36.6900
  • 10 $33.8400
  • 100 $29.4400
  • 500 $27.4600
$27.4600 / $36.6900 Buy Now
DISTI # 494-MSC015SMA070S
Mouser Electronics MOSFET MOSFET SIC 700 V 15 mOhm TO-268 RoHS: Compliant 159
  • 1 $36.6900
  • 30 $33.8400
  • 120 $29.4400
$29.4400 / $36.6900 Buy Now
DISTI # MSC015SMA070S
Microchip Technology Inc MOSFET SIC 700 V 15 mOhm TO-268, Projected EOL: 2048-10-03 RoHS: Compliant pbFree: Yes 0

Alternates Available
  • 1 $36.6900
  • 100 $29.4400
  • 500 $27.4600
$27.4600 / $36.6900 Buy Now
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 30 Package Multiple: 30 0
  • 30 $30.5200
$30.5200 Buy Now
Onlinecomponents.com SiC MOSFETs 420 Factory Stock
  • 8 $41.1900
  • 15 $32.9500
  • 23 $30.0900
  • 30 $29.4900
$29.4900 / $41.1900 Buy Now
DISTI # 66429859
Verical SiC MOSFETs Automotive AEC-Q101 Min Qty: 30 Package Multiple: 30 Americas - 30
  • 30 $45.8248
$45.8248 Buy Now
DISTI # 77577374
Verical SiC MOSFETs Automotive AEC-Q101 Min Qty: 20 Package Multiple: 20 Date Code: 2402 Americas - 20
  • 20 $59.2708
$59.2708 Buy Now
DISTI # MSC015SMA070S
Avnet Americas Silicon Carbide Power MOSFET N-Channel 700V 131A 3-Pin TO-268 - Rail/Tube (Alt: MSC015SMA070S) RoHS: Not Compliant Min Qty: 30 Package Multiple: 30 Lead time: 12 Weeks, 0 Days Container: Tube 0
  • 1 $36.6900
  • 10 $33.8400
  • 100 $29.4400
  • 500 $27.4600
$27.4600 / $36.6900 Buy Now
DISTI # MSC015SMA070S
TME Transistor: N-MOSFET, SiC, unipolar, 700V, 89A, Idm: 315A, 370W Min Qty: 1 14
  • 1 $48.9100
  • 3 $44.0200
  • 10 $38.9000
$38.9000 / $48.9100 Buy Now
NAC FG, SIC MOSFET, TO-268 RoHS: Compliant Min Qty: 1 Package Multiple: 30 Container: Tube 30
  • 1 $31.3900
  • 100 $28.9100
  • 500 $27.4600
  • 800 $26.7900
$26.7900 / $31.3900 Buy Now
DISTI # MSC015SMA070S
Richardson RFPD SILICON CARBIDE MOSFETS RoHS: Compliant Min Qty: 1 44
  • 1 $30.1700
  • 50 $29.3900
  • 100 $29.0200
$29.0200 / $30.1700 Buy Now
DISTI # MSC015SMA070S
Avnet Silica Silicon Carbide Power MOSFET N-Channel 700V 131A 3-Pin TO-268 (Alt: MSC015SMA070S) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 2 Weeks, 0 Days Silica - 0
Buy Now
DISTI # MSC015SMA070S
EBV Elektronik Silicon Carbide Power MOSFET N-Channel 700V 131A 3-Pin TO-268 (Alt: MSC015SMA070S) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 1 Weeks, 6 Days EBV - 0
Buy Now
Master Electronics SiC MOSFETs 420 Factory Stock
  • 8 $41.1900
  • 15 $32.9500
  • 23 $30.0900
  • 30 $29.4900
$29.4900 / $41.1900 Buy Now

Part Details for MSC015SMA070S

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MSC015SMA070S Part Data Attributes:

MSC015SMA070S Microchip Technology Inc
Buy Now Datasheet
Compare Parts:
MSC015SMA070S Microchip Technology Inc Power Field-Effect Transistor, 126A I(D), 700V, 0.019ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-268AA
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer MICROCHIP TECHNOLOGY INC
Package Description D3PAK-3/2
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.29.00.95
Factory Lead Time 12 Weeks
Samacsys Manufacturer Microchip
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 700 V
Drain Current-Max (ID) 126 A
Drain-source On Resistance-Max 0.019 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 29 pF
JEDEC-95 Code TO-268AA
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 370 W
Pulsed Drain Current-Max (IDM) 315 A
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON CARBIDE

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