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MSC080SMA120S by:

Power Field-Effect Transistor,

Part Details for MSC080SMA120S by Microsemi Corporation

Overview of MSC080SMA120S by Microsemi Corporation

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Part Details for MSC080SMA120S

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MSC080SMA120S Part Data Attributes

MSC080SMA120S Microsemi Corporation
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MSC080SMA120S Microsemi Corporation Power Field-Effect Transistor,
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer MICROSEMI CORP
Package Description TO-268, D3PAK-3/2
Reach Compliance Code unknown
ECCN Code EAR99
Date Of Intro 2020-01-29
Samacsys Manufacturer Microsemi Corporation
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 1200 V
Drain Current-Max (ID) 35 A
Drain-source On Resistance-Max 0.1 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-268AA
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 182 W
Pulsed Drain Current-Max (IDM) 87 A
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON CARBIDE

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