Part Details for MSC750SMA170SA by Microchip Technology Inc
Overview of MSC750SMA170SA by Microchip Technology Inc
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
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Price & Stock for MSC750SMA170SA
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
08AK9137
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Newark | Mosfet Sic 1700 V 750 Mohm To-263-7 7 To-263 Tube Rohs Compliant: Yes |Microchip MSC750SMA170SA Min Qty: 150 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
$4.2800 / $4.5900 | Buy Now |
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DISTI #
150-MSC750SMA170SA-ND
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DigiKey | MOSFET SIC 1700 V 750 MOHM D2PAK Min Qty: 150 Lead time: 8 Weeks Container: Tube | Temporarily Out of Stock |
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$4.5900 | Buy Now |
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DISTI #
579-MSC750SMA170SA
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Mouser Electronics | MOSFET MOSFET SIC 1700 V 750 mOhm TO-263-7 | 0 |
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$4.5900 / $5.7300 | Order Now |
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DISTI #
MSC750SMA170SA
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Microchip Technology Inc | MOSFET SIC 1700 V 750 mOhm TO-263-7, Projected EOL: 2048-10-03 RoHS: Compliant pbFree: Yes |
6 Alternates Available |
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$4.2800 / $5.7300 | Buy Now |
|
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Future Electronics | RoHS: Non Compliant pbFree: No Min Qty: 50 Package Multiple: 50 | 0 |
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$4.7700 | Buy Now |
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Onlinecomponents.com | 0 |
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$4.6900 / $6.7700 | Buy Now | |
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Ameya Holding Limited | 6 |
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RFQ | ||
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NAC | MOSFET SIC 1700 V 750 mOhm TO-263-7 RoHS: Compliant Min Qty: 100 Package Multiple: 50 | 0 |
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$4.1800 / $5.0400 | Buy Now |
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|
Master Electronics | 0 |
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$4.6900 / $6.7700 | Buy Now |
Part Details for MSC750SMA170SA
MSC750SMA170SA CAD Models
MSC750SMA170SA Part Data Attributes
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MSC750SMA170SA
Microchip Technology Inc
Buy Now
Datasheet
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Compare Parts:
MSC750SMA170SA
Microchip Technology Inc
Power Field-Effect Transistor
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | MICROCHIP TECHNOLOGY INC | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 360 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 1700 V | |
| Drain Current-Max (ID) | 6 A | |
| Drain-source On Resistance-Max | 0.94 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 2 pF | |
| JEDEC-95 Code | TO-263 | |
| JESD-30 Code | R-PSSO-G7 | |
| Number of Elements | 1 | |
| Number of Terminals | 7 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 64 W | |
| Pulsed Drain Current-Max (IDM) | 12 A | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON CARBIDE |