Part Details for MSCSM120DUM042AMG by Microchip Technology Inc
Overview of MSCSM120DUM042AMG by Microchip Technology Inc
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Space Technology
Environmental Monitoring
Internet of Things (IoT)
Smart Cities
Agriculture Technology
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Medical Imaging
Consumer Electronics
Education and Research
Security and Surveillance
Aerospace and Defense
Healthcare
Robotics and Drones
Price & Stock for MSCSM120DUM042AMG
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
MSCSM120DUM042AMG
|
Microchip Technology Inc | CC6332, Projected EOL: 2048-10-03 RoHS: Compliant pbFree: Yes |
0 Alternates Available |
|
$420.3000 / $835.8200 | Buy Now |
Part Details for MSCSM120DUM042AMG
MSCSM120DUM042AMG CAD Models
MSCSM120DUM042AMG Part Data Attributes
|
|
MSCSM120DUM042AMG
Microchip Technology Inc
Buy Now
Datasheet
|
Compare Parts:
MSCSM120DUM042AMG
Microchip Technology Inc
Power Field-Effect Transistor, 495A I(D), 1200V, 0.0052ohm, 2-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | MICROCHIP TECHNOLOGY INC | |
| Package Description | MODULE-7 | |
| Reach Compliance Code | compliant | |
| Case Connection | ISOLATED | |
| Configuration | COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 1200 V | |
| Drain Current-Max (ID) | 495 A | |
| Drain-source On Resistance-Max | 0.0052 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 150 pF | |
| JESD-30 Code | R-XUFM-X7 | |
| Number of Elements | 2 | |
| Number of Terminals | 7 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -40 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 990 A | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON CARBIDE |