Datasheets
MSCSM120HM083CAG by: Microchip Technology Inc

Power Field-Effect Transistor, 251A I(D), 1200V, 0.0104ohm, 4-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET

Part Details for MSCSM120HM083CAG by Microchip Technology Inc

Overview of MSCSM120HM083CAG by Microchip Technology Inc

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Price & Stock for MSCSM120HM083CAG

Part # Distributor Description Stock Price Buy
DISTI # 43AJ9411
Newark Pm-Mosfet-Sic-Sbd-Sp6C Rohs Compliant: Yes |Microchip MSCSM120HM083CAG Min Qty: 2 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 1 $847.0700
  • 50 $701.8500
  • 100 $629.2500
  • 250 $605.0500
  • 500 $532.4400
$532.4400 / $847.0700 Buy Now
DISTI # 150-MSCSM120HM083CAG-ND
DigiKey SIC MOSFET Min Qty: 2 Lead time: 37 Weeks Container: Bulk Temporarily Out of Stock
  • 2 $847.0700
$847.0700 Buy Now
DISTI # MSCSM120HM083CAG
Avnet Americas PM-MOSFET-SIC-SBD-SP6C - Bulk (Alt: MSCSM120HM083CAG) RoHS: Not Compliant Min Qty: 2 Package Multiple: 1 Lead time: 37 Weeks, 0 Days Container: Bulk 0
  • 1 $847.0700
  • 50 $701.8500
  • 100 $629.2500
  • 250 $605.0500
  • 500 $537.8222
$537.8222 / $847.0700 Buy Now
DISTI # 579-MSCSM120HM083CAG
Mouser Electronics Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-SP6C RoHS: Compliant 0
  • 1 $847.0700
$847.0700 Order Now
DISTI # MSCSM120HM083CAG
Microchip Technology Inc CC6302, Projected EOL: 2048-10-03 RoHS: Compliant pbFree: Yes 0

Alternates Available
  • 1 $847.0700
  • 50 $701.8500
  • 100 $629.2500
  • 250 $605.0500
  • 500 $532.4400
  • 1,000 $484.0400
  • 5,000 $425.9500
$425.9500 / $847.0700 Buy Now
Future Electronics   RoHS: Non Compliant pbFree: No Min Qty: 1 Package Multiple: 1 0
  • 1 $672.2800
$672.2800 Buy Now
Onlinecomponents.com   0
  • 1 $644.5300
  • 3 $603.2500
  • 5 $594.2000
  • 10 $585.2900
$585.2900 / $644.5300 Buy Now
DISTI # MSCSM120HM083CAG
Avnet Americas PM-MOSFET-SIC-SBD-SP6C - Bulk (Alt: MSCSM120HM083CAG) RoHS: Not Compliant Min Qty: 2 Package Multiple: 1 Lead time: 37 Weeks, 0 Days Container: Bulk 0
  • 1 $847.0700
  • 50 $701.8500
  • 100 $629.2500
  • 250 $605.0500
  • 500 $537.8222
$537.8222 / $847.0700 Buy Now
DISTI # MSCSM120HM083CAG
Avnet Americas PM-MOSFET-SIC-SBD-SP6C - Bulk (Alt: MSCSM120HM083CAG) RoHS: Not Compliant Min Qty: 2 Package Multiple: 1 Lead time: 37 Weeks, 0 Days Container: Bulk 0
  • 1 $847.0700
  • 50 $701.8500
  • 100 $629.2500
  • 250 $605.0500
  • 500 $537.8222
$537.8222 / $847.0700 Buy Now
NAC   RoHS: Compliant Min Qty: 1 Package Multiple: 1 0
  • 1 $645.3900
  • 11 $620.5600
  • 20 $605.0500
$605.0500 / $645.3900 Buy Now
Master Electronics   0
  • 1 $644.5300
  • 3 $603.2500
  • 5 $594.2000
  • 10 $585.2900
$585.2900 / $644.5300 Buy Now

Part Details for MSCSM120HM083CAG

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MSCSM120HM083CAG Part Data Attributes

MSCSM120HM083CAG Microchip Technology Inc
Buy Now Datasheet
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MSCSM120HM083CAG Microchip Technology Inc Power Field-Effect Transistor, 251A I(D), 1200V, 0.0104ohm, 4-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer MICROCHIP TECHNOLOGY INC
Package Description MODULE-12
Reach Compliance Code compliant
Factory Lead Time 37 Weeks
Samacsys Manufacturer Microchip
Case Connection ISOLATED
Configuration BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 1200 V
Drain Current-Max (ID) 251 A
Drain-source On Resistance-Max 0.0104 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 70 pF
JESD-30 Code R-XUFM-X12
Number of Elements 4
Number of Terminals 12
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -40 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 500 A
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Transistor Application SWITCHING
Transistor Element Material SILICON CARBIDE

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