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Transistors / Power Field-Effect Transistors / MSCSM120HM31CT3AG
Datasheets
MSCSM120HM31CT3AG by:

Power Field-Effect Transistor, 89A I(D), 1200V, 0.031ohm, 4-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET

Part Details for MSCSM120HM31CT3AG by Microchip Technology Inc

Overview of MSCSM120HM31CT3AG by Microchip Technology Inc

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Price & Stock for MSCSM120HM31CT3AG

Part # Distributor Description Stock Price Buy
DISTI # 78AH6525
Newark Pm-Mosfet-Sic-Sbd-Sp3F Rohs Compliant: Yes |Microchip MSCSM120HM31CT3AG Min Qty: 4 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 1 $270.3700
  • 50 $224.0200
  • 100 $200.8400
  • 250 $193.1200
  • 500 $169.9500
$169.9500 / $270.3700 Buy Now
DISTI # 150-MSCSM120HM31CT3AG-ND
DigiKey SIC 4N-CH 1200V 89A SP3F Min Qty: 1 Lead time: 37 Weeks Container: Tube 3
In Stock
  • 1 $270.3700
$270.3700 Buy Now
DISTI # MSCSM120HM31CT3AG
Avnet Americas Transistor MOSFET Array Quad 1200V 89A Screw Mount - Bulk (Alt: MSCSM120HM31CT3AG) RoHS: Not Compliant Min Qty: 4 Package Multiple: 1 Lead time: 37 Weeks, 0 Days Container: Bulk 0
  • 1 $270.3700
  • 50 $224.0200
  • 100 $200.8400
  • 250 $193.1200
  • 500 $171.6556
$171.6556 / $270.3700 Buy Now
DISTI # 494-120HM31CT3AG
Mouser Electronics Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-SP3F RoHS: Compliant 3
  • 1 $270.3700
$270.3700 Buy Now
DISTI # MSCSM120HM31CT3AG
Microchip Technology Inc CC3240, Projected EOL: 2048-10-03 RoHS: Compliant pbFree: Yes 0

Alternates Available
  • 1 $270.3700
  • 50 $224.0200
  • 100 $200.8400
  • 250 $193.1200
  • 500 $169.9500
  • 1,000 $154.4900
  • 5,000 $135.9600
$135.9600 / $270.3700 Buy Now
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 4 Package Multiple: 1 0
  • 4 $214.5700
$214.5700 Buy Now
Onlinecomponents.com   0
  • 1 $308.9800
  • 2 $231.7400
  • 3 $216.2900
  • 4 $211.9600
$211.9600 / $308.9800 Buy Now
DISTI # MSCSM120HM31CT3AG
Avnet Americas Transistor MOSFET Array Quad 1200V 89A Screw Mount - Bulk (Alt: MSCSM120HM31CT3AG) RoHS: Not Compliant Min Qty: 4 Package Multiple: 1 Lead time: 37 Weeks, 0 Days Container: Bulk 0
  • 1 $270.3700
  • 50 $224.0200
  • 100 $200.8400
  • 250 $193.1200
  • 500 $171.6556
$171.6556 / $270.3700 Buy Now
DISTI # MSCSM120HM31CT3AG
Avnet Americas Transistor MOSFET Array Quad 1200V 89A Screw Mount - Bulk (Alt: MSCSM120HM31CT3AG) RoHS: Not Compliant Min Qty: 4 Package Multiple: 1 Lead time: 37 Weeks, 0 Days Container: Bulk 0
  • 1 $270.3700
  • 50 $224.0200
  • 100 $200.8400
  • 250 $193.1200
  • 500 $171.6556
$171.6556 / $270.3700 Buy Now
NAC PM-MOSFET-SIC-SBD-SP3F RoHS: Compliant Min Qty: 1 Package Multiple: 1 Container: Tube 4
  • 1 $220.7000
  • 100 $203.2800
  • 500 $193.1100
  • 800 $188.4000
$188.4000 / $220.7000 Buy Now
Master Electronics   0
  • 1 $308.9800
  • 2 $231.7400
  • 3 $216.2900
  • 4 $211.9600
$211.9600 / $308.9800 Buy Now

Part Details for MSCSM120HM31CT3AG

MSCSM120HM31CT3AG CAD Models

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MSCSM120HM31CT3AG Part Data Attributes

Parametric Data
MSCSM120HM31CT3AG Microchip Technology Inc
Buy Now Datasheet
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MSCSM120HM31CT3AG Microchip Technology Inc Power Field-Effect Transistor, 89A I(D), 1200V, 0.031ohm, 4-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer MICROCHIP TECHNOLOGY INC
Package Description MODULE-25
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.50.00.80
Factory Lead Time 37 Weeks
Samacsys Manufacturer Microchip
Case Connection ISOLATED
Configuration BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
DS Breakdown Voltage-Min 1200 V
Drain Current-Max (ID) 89 A
Drain-source On Resistance-Max 0.031 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-XUFM-X25
Number of Elements 4
Number of Terminals 25
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -40 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 395 W
Pulsed Drain Current-Max (IDM) 180 A
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Transistor Application SWITCHING
Transistor Element Material SILICON CARBIDE

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