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Power Field-Effect Transistor, 238A I(D), 700V, 0.0095ohm, 6-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
78AH6539
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Newark | Pm-Mosfet-Sic-Sbd-Sp6P Rohs Compliant: Yes |Microchip MSCSM70TAM10CTPAG RoHS: Compliant Min Qty: 2 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
$498.1200 / $792.4700 | Buy Now |
DISTI #
150-MSCSM70TAM10CTPAG-ND
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DigiKey | SIC 6N-CH 700V 238A SP6-P Min Qty: 2 Lead time: 23 Weeks Container: Tube | Temporarily Out of Stock |
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$792.4700 | Buy Now |
DISTI #
MSCSM70TAM10CTPAG
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Avnet Americas | Transistor MOSFET Array Triple Phase 700V 238A Screw Mount - Bulk (Alt: MSCSM70TAM10CTPAG) RoHS: Not Compliant Min Qty: 2 Package Multiple: 1 Lead time: 23 Weeks, 0 Days Container: Bulk | 0 |
|
$503.1556 / $792.4700 | Buy Now |
DISTI #
494-70TAM10CTPAG
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Mouser Electronics | Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-SP6P RoHS: Compliant | 0 |
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$792.4700 | Order Now |
DISTI #
MSCSM70TAM10CTPAG
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Microchip Technology Inc | CC6554, Projected EOL: 2044-04-30 RoHS: Compliant pbFree: Yes |
0 Alternates Available |
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$398.5100 / $792.4700 | Buy Now |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 2 Package Multiple: 1 | 0 |
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$628.9500 | Buy Now |
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Onlinecomponents.com | RoHS: Compliant | 3 Factory Stock |
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$547.5600 / $602.9900 | Buy Now |
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NAC | UNRLS CC6554 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Container: Tube | 0 |
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$566.0500 / $603.7900 | Buy Now |
DISTI #
MSCSM70TAM10CTP
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Richardson RFPD | SILICON CARBIDE MOSFET MODULES RoHS: Compliant Min Qty: 2 | 0 |
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$596.0000 / $611.7900 | Buy Now |
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Master Electronics | RoHS: Compliant | 3 Factory Stock |
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$547.5600 / $602.9900 | Buy Now |
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MSCSM70TAM10CTPAG
Microchip Technology Inc
Buy Now
Datasheet
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Compare Parts:
MSCSM70TAM10CTPAG
Microchip Technology Inc
Power Field-Effect Transistor, 238A I(D), 700V, 0.0095ohm, 6-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET
|
Part Life Cycle Code | Active | |
Ihs Manufacturer | MICROCHIP TECHNOLOGY INC | |
Package Description | MODULE-23 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.50.00.80 | |
Factory Lead Time | 23 Weeks | |
Samacsys Manufacturer | Microchip | |
Case Connection | ISOLATED | |
Configuration | 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR | |
DS Breakdown Voltage-Min | 700 V | |
Drain Current-Max (ID) | 238 A | |
Drain-source On Resistance-Max | 0.0095 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 58 pF | |
JESD-30 Code | R-XUFM-X23 | |
Number of Elements | 6 | |
Number of Terminals | 23 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -40 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 476 A | |
Surface Mount | NO | |
Terminal Form | UNSPECIFIED | |
Terminal Position | UPPER | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON CARBIDE |