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Part Details for MT40A1G8SA-075:E by Micron Technology Inc
Results Overview of MT40A1G8SA-075:E by Micron Technology Inc
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (5 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Internet of Things (IoT)
Computing and Data Storage
Entertainment and Gaming
MT40A1G8SA-075:E Information
MT40A1G8SA-075:E by Micron Technology Inc is a DRAM.
DRAMs are under the broader part category of Memory Components.
Memory components are essential in electronics for computer processing. They can be volatile or non-volatile, depending on the desired function. Read more about Memory Components on our Memory part category page.
Price & Stock for MT40A1G8SA-075:E
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
3577563
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element14 Asia-Pacific | , 8GB, DDR4, FBGA-78 RoHS: Compliant Min Qty: 1 Container: Each | 10 |
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$7.3300 / $9.0700 | Buy Now |
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Chip 1 Exchange | INSTOCK | 569 |
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RFQ | |
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DISTI #
MT40A1G8SA-075:E
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Avnet Asia | DDR4 8G 1GX8 FBGA (Alt: MT40A1G8SA-075:E) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 | 10000 |
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RFQ | |
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Vyrian | Memory ICs | 3577 |
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RFQ | |
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Win Source Electronics | IC DRAM 8G PARALLEL 1.33GHZ | 14531 |
|
$2.2137 / $2.8593 | Buy Now |
Part Details for MT40A1G8SA-075:E
MT40A1G8SA-075:E CAD Models
MT40A1G8SA-075:E Part Data Attributes
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MT40A1G8SA-075:E
Micron Technology Inc
Buy Now
Datasheet
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Compare Parts:
MT40A1G8SA-075:E
Micron Technology Inc
DDR DRAM, 1GX8, CMOS, PBGA78, FBGA-78
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | MICRON TECHNOLOGY INC | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.36 | |
| Date Of Intro | 2017-07-13 | |
| Samacsys Manufacturer | Micron | |
| Access Mode | MULTI BANK PAGE BURST | |
| Additional Feature | AUTO/SELF REFRESH | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 8 | |
| JESD-30 Code | R-PBGA-B78 | |
| JESD-609 Code | e1 | |
| Length | 11 mm | |
| Memory Density | 8589934592 bit | |
| Memory IC Type | DDR4 DRAM | |
| Memory Width | 8 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 78 | |
| Number of Words | 1073741824 words | |
| Number of Words Code | 1000000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 85 °C | |
| Operating Temperature-Min | ||
| Organization | 1GX8 | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TFBGA | |
| Package Equivalence Code | BGA78,6X13,32 | |
| Package Shape | RECTANGULAR | |
| Package Style | GRID ARRAY, THIN PROFILE, FINE PITCH | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Refresh Cycles | 8192 | |
| Reverse Pinout | NO | |
| Seated Height-Max | 1.2 mm | |
| Self Refresh | YES | |
| Supply Voltage-Max (Vsup) | 1.26 V | |
| Supply Voltage-Min (Vsup) | 1.14 V | |
| Supply Voltage-Nom (Vsup) | 1.2 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | OTHER | |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) | |
| Terminal Form | BALL | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | BOTTOM | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Width | 7.5 mm |
Alternate Parts for MT40A1G8SA-075:E
This table gives cross-reference parts and alternative options found for MT40A1G8SA-075:E. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MT40A1G8SA-075:E, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| MT40A1G8SA-062E:E | Micron Technology Inc | $2.3850 | DDR DRAM, 1GX8, CMOS, PBGA78, FBGA-78 | MT40A1G8SA-075:E vs MT40A1G8SA-062E:E |
| MT40A1G8SA-062E:R | Micron Technology Inc | $8.5296 | DDR4 DRAM, 1GX8, CMOS, PBGA78, | MT40A1G8SA-075:E vs MT40A1G8SA-062E:R |
| MT40A1G8WE-083EIT:B | Micron Technology Inc | Check for Price | DDR DRAM, 1GX8, CMOS, PBGA78, FBGA-78 | MT40A1G8SA-075:E vs MT40A1G8WE-083EIT:B |
| MT40A1G8SA-062E:ETR | Micron Technology Inc | Check for Price | DDR DRAM, | MT40A1G8SA-075:E vs MT40A1G8SA-062E:ETR |
| MT40A1G8SA-062EIT:E | Micron Technology Inc | Check for Price | DDR DRAM, 1GX8, CMOS, PBGA78, FBGA-78 | MT40A1G8SA-075:E vs MT40A1G8SA-062EIT:E |
MT40A1G8SA-075:E Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the MT40A1G8SA-075:E is 0°C to 95°C, with a storage temperature range of -40°C to 100°C.
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To ensure signal integrity on the address and command bus, it is recommended to use a controlled impedance PCB design, route the signals as differential pairs, and use a termination scheme such as ODT (On-Die Termination) or a external resistor.
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The recommended voltage for the VDD and VDDQ power supplies is 1.2V ± 0.06V.
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The MT40A1G8SA-075:E module requires a refresh command every 64ms, with a maximum of 8 refresh commands every 64ms. The refresh command should be issued during the self-refresh mode.
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The maximum current consumption for the MT40A1G8SA-075:E module is 1.5A for VDD and 1.5A for VDDQ.