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Memory / DRAMs / MT40A256M16GE-083E:B
Datasheets
MT40A256M16GE-083E:B by:

DDR DRAM, 256MX16, CMOS, PBGA96, FBGA-96

Part Details for MT40A256M16GE-083E:B by Micron Technology Inc

Results Overview of MT40A256M16GE-083E:B by Micron Technology Inc

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MT40A256M16GE-083E:B Information

MT40A256M16GE-083E:B by Micron Technology Inc is a DRAM.
DRAMs are under the broader part category of Memory Components.

Memory components are essential in electronics for computer processing. They can be volatile or non-volatile, depending on the desired function. Read more about Memory Components on our Memory part category page.

Available Datasheets

Part # Manufacturer Description Datasheet
20083EB0BD Amphenol Communications Solutions Elite Backplane connectors, DO 8pair, 12position, NiS

Price & Stock for MT40A256M16GE-083E:B

Part # Distributor Description Stock Price Buy
DISTI # MT40A256M16GE-083E:B
Avnet Silica DRAM Chip DDR4 SDRAM 4GBit 256M x 16 12V 96Pin TFBGA (Alt: MT40A256M16GE-083E:B) RoHS: Compliant Min Qty: 1020 Package Multiple: 1020 Lead time: 143 Weeks, 0 Days Silica - 0
Buy Now
DISTI # MT40A256M16GE-083E:B
EBV Elektronik DRAM Chip DDR4 SDRAM 4GBit 256M x 16 12V 96Pin TFBGA (Alt: MT40A256M16GE-083E:B) RoHS: Compliant Min Qty: 1020 Package Multiple: 1020 EBV - 0
Buy Now
Vyrian Memory ICs 1111
RFQ
Win Source Electronics IC SDRAM 4GBIT 1.2GHZ 96BGA / DRAM Chip DDR4 SDRAM 4Gbit 256Mx16 1.2V 96-Pin FBGA 28365
  • 14 $3.7113
  • 29 $3.4718
  • 45 $3.3521
  • 65 $3.1127
  • 84 $2.9930
  • 105 $2.8732
$2.8732 / $3.7113 Buy Now

Part Details for MT40A256M16GE-083E:B

MT40A256M16GE-083E:B CAD Models

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MT40A256M16GE-083E:B Part Data Attributes

Parametric Data
MT40A256M16GE-083E:B Micron Technology Inc
Buy Now Datasheet
Compare Parts:
MT40A256M16GE-083E:B Micron Technology Inc DDR DRAM, 256MX16, CMOS, PBGA96, FBGA-96
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer MICRON TECHNOLOGY INC
Package Description FBGA-96
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8542.32.00.36
Samacsys Manufacturer Micron
Access Mode MULTI BANK PAGE BURST
Additional Feature AUTO/SELF REFRESH
JESD-30 Code R-PBGA-B96
Length 14 mm
Memory Density 4294967296 bit
Memory IC Type DDR DRAM
Memory Width 16
Number of Functions 1
Number of Ports 1
Number of Terminals 96
Number of Words 268435456 words
Number of Words Code 256000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 85 °C
Operating Temperature-Min
Organization 256MX16
Package Body Material PLASTIC/EPOXY
Package Code TFBGA
Package Shape RECTANGULAR
Package Style GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Cel) NOT SPECIFIED
Seated Height-Max 1.2 mm
Self Refresh YES
Supply Voltage-Max (Vsup) 1.26 V
Supply Voltage-Min (Vsup) 1.14 V
Supply Voltage-Nom (Vsup) 1.2 V
Surface Mount YES
Technology CMOS
Temperature Grade OTHER
Terminal Form BALL
Terminal Pitch 0.8 mm
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Width 9 mm

Alternate Parts for MT40A256M16GE-083E:B

This table gives cross-reference parts and alternative options found for MT40A256M16GE-083E:B. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MT40A256M16GE-083E:B, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
EDY4016AABG-DR-F-D Micron Technology Inc Check for Price DDR DRAM, 256MX16, CMOS, PBGA96, FBGA-96 MT40A256M16GE-083E:B vs EDY4016AABG-DR-F-D
Part Number Manufacturer Composite Price Description Compare
MT40A256M16GE-083EIT:B Micron Technology Inc Check for Price DDR DRAM, 256MX16, CMOS, PBGA96, FBGA-96 MT40A256M16GE-083E:B vs MT40A256M16GE-083EIT:B
MT40A256M16LY-062EAUT:B Micron Technology Inc Check for Price MT40A256M16LY-062EAUT:B, MT40A256M16GE-083E:B vs MT40A256M16LY-062EAUT:B
MT40A256M16LY-062EAUT:F Micron Technology Inc Check for Price MT40A256M16LY-062EAUT:F, MT40A256M16GE-083E:B vs MT40A256M16LY-062EAUT:F
MT40A256M16LY-062EAIT:F Micron Technology Inc Check for Price MT40A256M16LY-062EAIT:F, MT40A256M16GE-083E:B vs MT40A256M16LY-062EAIT:F
MT40A256M16LY-062EAIT:B Micron Technology Inc Check for Price MT40A256M16LY-062EAIT:B, MT40A256M16GE-083E:B vs MT40A256M16LY-062EAIT:B
MT40A256M16LY-062EA:F Micron Technology Inc Check for Price MT40A256M16LY-062EA:F, MT40A256M16GE-083E:B vs MT40A256M16LY-062EA:F
MT40A256M16LY-062EA:B Micron Technology Inc Check for Price MT40A256M16LY-062EA:B, MT40A256M16GE-083E:B vs MT40A256M16LY-062EA:B
MT40A256M16LY-062EAAT:B Micron Technology Inc Check for Price MT40A256M16LY-062EAAT:B, MT40A256M16GE-083E:B vs MT40A256M16LY-062EAAT:B

MT40A256M16GE-083E:B Related Parts

MT40A256M16GE-083E:B Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for this module is 0°C to 85°C, with a storage temperature range of -40°C to 100°C.

  • To ensure signal integrity on the address and command bus, use a controlled impedance PCB design, keep the signal traces short and matched, and use a termination scheme such as ODT (On-Die Termination) or a discrete resistor.

  • The recommended voltage for the VDD and VDDQ power supplies is 1.2V ± 0.06V.

  • The MT40A256M16GE-083E:B module uses an auto-refresh mechanism, which means that the controller must send a refresh command to the module at a rate of at least one refresh every 64ms.

  • The maximum current consumption of this module is 1.5A for VDD and 1.5A for VDDQ, with a total power consumption of approximately 6.5W.

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