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Memory / DRAMs / MT47H128M16RT-25EAIT:C
Datasheets
MT47H128M16RT-25EAIT:C by: Micron Technology Inc

DDR DRAM, 128MX16, 0.4ns, CMOS, PBGA84, 9 X 12.5 M, ROHS COMPLIANT, FBGA-84

Part Details for MT47H128M16RT-25EAIT:C by Micron Technology Inc

Results Overview of MT47H128M16RT-25EAIT:C by Micron Technology Inc

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MT47H128M16RT-25EAIT:C Information

MT47H128M16RT-25EAIT:C by Micron Technology Inc is a DRAM.
DRAMs are under the broader part category of Memory Components.

Memory components are essential in electronics for computer processing. They can be volatile or non-volatile, depending on the desired function. Read more about Memory Components on our Memory part category page.

Price & Stock for MT47H128M16RT-25EAIT:C

Part # Distributor Description Stock Price Buy
New Advantage Corporation   RoHS: Compliant Min Qty: 1 Package Multiple: 1 144
  • 10 $9.4900
$9.4900 Buy Now

Part Details for MT47H128M16RT-25EAIT:C

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MT47H128M16RT-25EAIT:C Part Data Attributes

Parametric Data
MT47H128M16RT-25EAIT:C Micron Technology Inc
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MT47H128M16RT-25EAIT:C Micron Technology Inc DDR DRAM, 128MX16, 0.4ns, CMOS, PBGA84, 9 X 12.5 M, ROHS COMPLIANT, FBGA-84
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer MICRON TECHNOLOGY INC
Part Package Code BGA
Package Description FBGA-84
Pin Count 84
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8542.32.00.36
Access Mode MULTI BANK PAGE BURST
Access Time-Max 0.4 ns
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 400 MHz
I/O Type COMMON
Interleaved Burst Length 4,8
JESD-30 Code R-PBGA-B84
JESD-609 Code e1
Length 12.5 mm
Memory Density 2147483648 bit
Memory IC Type DDR2 DRAM
Memory Width 16
Number of Functions 1
Number of Ports 1
Number of Terminals 84
Number of Words 134217728 words
Number of Words Code 128000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 95 °C
Operating Temperature-Min -40 °C
Organization 128MX16
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code TFBGA
Package Equivalence Code BGA84,9X15,32
Package Shape RECTANGULAR
Package Style GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Cel) 260
Qualification Status Not Qualified
Refresh Cycles 8192
Screening Level AEC-Q100
Seated Height-Max 1.2 mm
Self Refresh YES
Sequential Burst Length 4,8
Standby Current-Max 0.05 A
Supply Current-Max 0.28 mA
Supply Voltage-Max (Vsup) 1.9 V
Supply Voltage-Min (Vsup) 1.7 V
Supply Voltage-Nom (Vsup) 1.8 V
Surface Mount YES
Technology CMOS
Temperature Grade INDUSTRIAL
Terminal Finish TIN SILVER COPPER
Terminal Form BALL
Terminal Pitch 0.8 mm
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) 30
Width 9 mm

Alternate Parts for MT47H128M16RT-25EAIT:C

This table gives cross-reference parts and alternative options found for MT47H128M16RT-25EAIT:C. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MT47H128M16RT-25EAIT:C, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
MT47H128M16RT-25EAIT:A Micron Technology Inc Check for Price DDR DRAM, 128MX16, 0.4ns, CMOS, PBGA84, 9 X 12.5 M, ROHS COMPLIANT, FBGA-84 MT47H128M16RT-25EAIT:C vs MT47H128M16RT-25EAIT:A
MT47H128M16RT-25EXIT:C Micron Technology Inc Check for Price DDR DRAM, 128MX16, 0.4ns, CMOS, PBGA84, 9 X 12.50 MM, ROHS COMPLIANT, FBGA-84 MT47H128M16RT-25EAIT:C vs MT47H128M16RT-25EXIT:C
MT47H128M16RT-25E:CTR Micron Technology Inc Check for Price DDR DRAM, 128MX16, 0.4ns, CMOS, PBGA84, 9 X 12.50 MM, ROHS COMPLIANT, FBGA-84 MT47H128M16RT-25EAIT:C vs MT47H128M16RT-25E:CTR
MT47H128M16RT-25E:C Micron Technology Inc $9.6898 DDR DRAM, 128MX16, 0.4ns, CMOS, PBGA84, 9 X 12.50 MM, ROHS COMPLIANT, FBGA-84 MT47H128M16RT-25EAIT:C vs MT47H128M16RT-25E:C
MT47H128M16RT-25EAAT:C Micron Technology Inc Check for Price DDR DRAM, 128MX16, 0.4ns, CMOS, PBGA84, 9 X 12.5 M, ROHS COMPLIANT, FBGA-84 MT47H128M16RT-25EAIT:C vs MT47H128M16RT-25EAAT:C
MT47H128M16PK-25EIT:C Micron Technology Inc Check for Price DDR DRAM, 128MX16, 0.4ns, CMOS, PBGA84, 9 X 12.50 MM, FBGA-84 MT47H128M16RT-25EAIT:C vs MT47H128M16PK-25EIT:C
MT47H128M16PK-25E:C Micron Technology Inc Check for Price DDR DRAM, 128MX16, 0.4ns, CMOS, PBGA84, 9 X 12.50 MM, FBGA-84 MT47H128M16RT-25EAIT:C vs MT47H128M16PK-25E:C
MT47H128M16RT-25EIT:C Micron Technology Inc Check for Price DDR DRAM, 128MX16, 0.4ns, CMOS, PBGA84, 9 X 12.50 MM, ROHS COMPLIANT, FBGA-84 MT47H128M16RT-25EAIT:C vs MT47H128M16RT-25EIT:C
MT47H128M16RT-25EAIT:CTR Micron Technology Inc Check for Price DDR DRAM, MT47H128M16RT-25EAIT:C vs MT47H128M16RT-25EAIT:CTR
Part Number Manufacturer Composite Price Description Compare
MT47H128M16RT-25E:A Micron Technology Inc Check for Price DDR DRAM, 128MX16, 0.4ns, CMOS, PBGA84, 9 X 12.5 M, ROHS COMPLIANT, FBGA-84 MT47H128M16RT-25EAIT:C vs MT47H128M16RT-25E:A
V59C1G02168QBLP3 ProMOS Technologies Inc Check for Price DDR DRAM, 128MX16, 0.4ns, CMOS, PBGA84, GREEN, FBGA-84 MT47H128M16RT-25EAIT:C vs V59C1G02168QBLP3
SCB18T2G160AF-25DA2 Xi'an UniIC Semiconductors Co Ltd Check for Price DDR DRAM, MT47H128M16RT-25EAIT:C vs SCB18T2G160AF-25DA2
IS43DR16128C-25DBLI Integrated Silicon Solution Inc $6.6390 DDR DRAM, 128MX16, 0.4ns, CMOS, PBGA84, WBGA-84 MT47H128M16RT-25EAIT:C vs IS43DR16128C-25DBLI
SCB18T2G160AF-25E Xi'an UniIC Semiconductors Co Ltd Check for Price DDR DRAM, MT47H128M16RT-25EAIT:C vs SCB18T2G160AF-25E
IS46DR16128C-25DBLA2 Integrated Silicon Solution Inc Check for Price DDR DRAM, 128MX16, 0.4ns, CMOS, PBGA84, WBGA-84 MT47H128M16RT-25EAIT:C vs IS46DR16128C-25DBLA2
IS46DR16128-3DBLA2 Integrated Silicon Solution Inc Check for Price DDR DRAM, 128MX16, 0.45ns, CMOS, PBGA84, 10.50 X 13.50 MM, 1.40 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, LFBGA-84 MT47H128M16RT-25EAIT:C vs IS46DR16128-3DBLA2
IS43DR16128B-25EBL Integrated Silicon Solution Inc Check for Price DDR DRAM, 128MX16, 0.4ns, CMOS, PBGA84, 10.50 X 13.50 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, TWBGA-84 MT47H128M16RT-25EAIT:C vs IS43DR16128B-25EBL
MT47H128M16HG-3L:A Micron Technology Inc Check for Price DDR DRAM, 128MX16, 0.45ns, CMOS, PBGA84, 11.50 X 14 MM, ROHS COMPLIANT, FBGA-84 MT47H128M16RT-25EAIT:C vs MT47H128M16HG-3L:A
IS46DR16128C-25DBLA1 Integrated Silicon Solution Inc Check for Price DDR DRAM, 128MX16, 0.4ns, CMOS, PBGA84, WBGA-84 MT47H128M16RT-25EAIT:C vs IS46DR16128C-25DBLA1

MT47H128M16RT-25EAIT:C Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for this module is 0°C to 85°C, with an extended temperature range of -40°C to 95°C for industrial applications.

  • To ensure signal integrity and reduce noise on the memory bus, it is recommended to follow the PCB layout guidelines provided in the Micron application note AN-901, and to use a signal integrity analysis tool to simulate and optimize the design.

  • The recommended refresh rate for this module is 4K refresh cycles per 64ms, with a minimum refresh interval of 3.9μs.

  • No, this module is designed to operate at a voltage supply of 1.2V, and using a different voltage supply may damage the module or affect its performance.

  • The module supports error detection and correction using ECC (Error-Correcting Code) and parity bits. It is recommended to implement a fault-tolerant design that can detect and correct errors, and to use a memory controller that supports ECC and parity checking.

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