Datasheets
MT53D512M32D2DS-053WT:D by: Micron Technology Inc

LPDDR4 DRAM, 512MX32, CMOS, PBGA200, WFBGA-200

Part Details for MT53D512M32D2DS-053WT:D by Micron Technology Inc

Results Overview of MT53D512M32D2DS-053WT:D by Micron Technology Inc

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Applications Industrial Automation Renewable Energy Robotics and Drones

MT53D512M32D2DS-053WT:D Information

MT53D512M32D2DS-053WT:D by Micron Technology Inc is a DRAM.
DRAMs are under the broader part category of Memory Components.

Memory components are essential in electronics for computer processing. They can be volatile or non-volatile, depending on the desired function. Read more about Memory Components on our Memory part category page.

Available Datasheets

Part # Manufacturer Description Datasheet
DBL5W5P543A40LF Amphenol Communications Solutions D-Sub Power Board Mount Connectors, Input Output Connectors, Full Power 5W5 Pin Right Angle Solder 40A, Europe Standard, 500 Cycles, Front: Threaded Insert M3, Back: Without Accessory on PCB.
DEL2V2P543H40LF Amphenol Communications Solutions D-Sub Power Board Mount Connectors, Input Output Connectors, Full Power 2V2 Pin Right Angle Solder 40A, Europe Standard, 500 Cycles, Front: Threaded Insert M3, Back: Harpoons for 2.4mm PCB Thickness.
DC8W8P500H30LF Amphenol Communications Solutions D-Sub Power Board Mount Connectors, Input Output Connectors, Full Power 8W8 Pin Right Angle Solder 30A, Europe Standard, 200 Cycles, Front: Without Accessory, Back: Harpoons for 2.4mm PCB Thickness.

Price & Stock for MT53D512M32D2DS-053WT:D

Part # Distributor Description Stock Price Buy
Chip-Germany GmbH   RoHS: Not Compliant 117
RFQ

Part Details for MT53D512M32D2DS-053WT:D

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MT53D512M32D2DS-053WT:D Part Data Attributes

MT53D512M32D2DS-053WT:D Micron Technology Inc
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MT53D512M32D2DS-053WT:D Micron Technology Inc LPDDR4 DRAM, 512MX32, CMOS, PBGA200, WFBGA-200
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer MICRON TECHNOLOGY INC
Package Description WFBGA-200
Reach Compliance Code compliant
Samacsys Manufacturer Micron
Access Mode SINGLE BANK PAGE BURST
Additional Feature SELF REFRESH, IT ALSO REQUIRES 1.1V NOMINAL SUPPLY, TERM PITCH-MAX
Clock Frequency-Max (fCLK) 1866 MHz
I/O Type COMMON
Interleaved Burst Length 16,32
JESD-30 Code R-PBGA-B200
Length 14.5 mm
Memory Density 17179869184 bit
Memory IC Type LPDDR4 DRAM
Memory Width 32
Number of Functions 1
Number of Ports 1
Number of Terminals 200
Number of Words 536870912 words
Number of Words Code 512000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 85 °C
Operating Temperature-Min -25 °C
Organization 512MX32
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code VFBGA
Package Equivalence Code BGA200,12X20,32/25
Package Shape RECTANGULAR
Package Style GRID ARRAY, VERY THIN PROFILE, FINE PITCH
Seated Height-Max 0.8 mm
Self Refresh YES
Sequential Burst Length 16,32
Standby Current-Max 0.000002 A
Supply Current-Max 0.33 mA
Supply Voltage-Max (Vsup) 1.17 V
Supply Voltage-Min (Vsup) 1.06 V
Supply Voltage-Nom (Vsup) 1.1 V
Surface Mount YES
Technology CMOS
Terminal Form BALL
Terminal Pitch 0.8 mm
Terminal Position BOTTOM
Width 10 mm

MT53D512M32D2DS-053WT:D Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for this module is 0°C to 85°C, with an optional industrial temperature range of -40°C to 95°C available upon request.

  • To ensure signal integrity and reduce noise on the memory bus, it is recommended to follow proper PCB design guidelines, use differential signaling, and add decoupling capacitors near the module. Additionally, consider using a signal integrity analysis tool to simulate and optimize the design.

  • The recommended refresh rate for this module is 4K refresh cycles per 64ms, with a minimum refresh interval of 7.8us.

  • The MT53D512M32D2DS-053WT:D module is designed to operate at 1.2V, but it can tolerate a voltage range of 1.17V to 1.27V. However, operating the module outside of its recommended voltage range may affect its performance, reliability, or lifespan.

  • Error handling and retries should be implemented in the system design to handle errors that may occur during memory access. This can include using error-correcting codes, such as ECC, and implementing retry mechanisms to recover from errors.

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