Part Details for MTA4ATF51264HZ-2G6E1 by Micron Technology Inc
Results Overview of MTA4ATF51264HZ-2G6E1 by Micron Technology Inc
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (1 replacement)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
MTA4ATF51264HZ-2G6E1 Information
MTA4ATF51264HZ-2G6E1 by Micron Technology Inc is a DRAM.
DRAMs are under the broader part category of Memory Components.
Memory components are essential in electronics for computer processing. They can be volatile or non-volatile, depending on the desired function. Read more about Memory Components on our Memory part category page.
Price & Stock for MTA4ATF51264HZ-2G6E1
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
80AH7016
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Newark | Sdram, Ddr4 Sodimm, 4Gb, 1.333Ghz, Memory Speed:1Mhz, Module Memory:Pc4-2666, Module Form Factor:260-Pin Ddr4 Sdram So-Dimm, Memory Application:Notebook Sodimm, Memory Configuration:512M X 64Bit, Supply Voltage Min:1.14V Rohs Compliant: Yes |Micron MTA4ATF51264HZ-2G6E1 RoHS: Compliant Min Qty: 100 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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Buy Now | |
DISTI #
MTA4ATF51264HZ-2G6E1
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Avnet Silica | DDR4 4GB SODIMM (Alt: MTA4ATF51264HZ-2G6E1) RoHS: Compliant Min Qty: 100 Package Multiple: 100 Lead time: 143 Weeks, 0 Days | Silica - 0 |
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Part Details for MTA4ATF51264HZ-2G6E1
MTA4ATF51264HZ-2G6E1 CAD Models
MTA4ATF51264HZ-2G6E1 Part Data Attributes
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MTA4ATF51264HZ-2G6E1
Micron Technology Inc
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Datasheet
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MTA4ATF51264HZ-2G6E1
Micron Technology Inc
DDR DRAM Module, 512MX64, CMOS, DIMM-260
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | MICRON TECHNOLOGY INC | |
Package Description | DIMM, | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8542.32.00.36 | |
Samacsys Manufacturer | Micron | |
Access Mode | SINGLE BANK PAGE BURST | |
Additional Feature | WD-MAX | |
JESD-30 Code | R-XZMA-N260 | |
Length | 69.6 mm | |
Memory Density | 34359738368 bit | |
Memory IC Type | DDR DRAM MODULE | |
Memory Width | 64 | |
Number of Functions | 1 | |
Number of Ports | 1 | |
Number of Terminals | 260 | |
Number of Words | 536870912 words | |
Number of Words Code | 512000000 | |
Operating Mode | SYNCHRONOUS | |
Operating Temperature-Max | 95 °C | |
Operating Temperature-Min | ||
Organization | 512MX64 | |
Package Body Material | UNSPECIFIED | |
Package Code | DIMM | |
Package Shape | RECTANGULAR | |
Package Style | MICROELECTRONIC ASSEMBLY | |
Seated Height-Max | 30.13 mm | |
Supply Voltage-Max (Vsup) | 1.26 V | |
Supply Voltage-Min (Vsup) | 1.14 V | |
Supply Voltage-Nom (Vsup) | 1.2 V | |
Surface Mount | NO | |
Technology | CMOS | |
Temperature Grade | OTHER | |
Terminal Form | NO LEAD | |
Terminal Position | ZIG-ZAG | |
Width | 2.5 mm |
Alternate Parts for MTA4ATF51264HZ-2G6E1
This table gives cross-reference parts and alternative options found for MTA4ATF51264HZ-2G6E1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MTA4ATF51264HZ-2G6E1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
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MTA4ATF51264HZ-2G6XX | Micron Technology Inc | Check for Price | DDR DRAM Module, 512MX64, CMOS, SODIMM-260 | MTA4ATF51264HZ-2G6E1 vs MTA4ATF51264HZ-2G6XX |