Part Details for MTB20N20ET4 by Motorola Semiconductor Products
Overview of MTB20N20ET4 by Motorola Semiconductor Products
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for MTB20N20ET4
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 409 |
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RFQ | ||
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Quest Components | MOSFET Transistor, N-Channel, TO-263AB | 327 |
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$3.6300 / $6.6000 | Buy Now |
Part Details for MTB20N20ET4
MTB20N20ET4 CAD Models
MTB20N20ET4 Part Data Attributes
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MTB20N20ET4
Motorola Semiconductor Products
Buy Now
Datasheet
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MTB20N20ET4
Motorola Semiconductor Products
Power Field-Effect Transistor, 20A I(D), 200V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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Rohs Code | No | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | MOTOROLA INC | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 600 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 200 V | |
Drain Current-Max (ID) | 20 A | |
Drain-source On Resistance-Max | 0.16 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 125 W | |
Pulsed Drain Current-Max (IDM) | 60 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Tin/Lead (Sn/Pb) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |