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Overview of MTB23P06VT4 by Motorola Semiconductor Products
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- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
CAD Models for MTB23P06VT4 by Motorola Semiconductor Products
Part Data Attributes for MTB23P06VT4 by Motorola Semiconductor Products
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|
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Part Life Cycle Code
|
Transferred
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Ihs Manufacturer
|
MOTOROLA INC
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Package Description
|
SMALL OUTLINE, R-PSSO-G2
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Reach Compliance Code
|
unknown
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ECCN Code
|
EAR99
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HTS Code
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8541.29.00.95
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Additional Feature
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AVALANCHE RATED
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Avalanche Energy Rating (Eas)
|
794 mJ
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Case Connection
|
DRAIN
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Configuration
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SINGLE WITH BUILT-IN DIODE
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DS Breakdown Voltage-Min
|
60 V
|
Drain Current-Max (ID)
|
23 A
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Drain-source On Resistance-Max
|
0.12 Ω
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
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Feedback Cap-Max (Crss)
|
210 pF
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JESD-30 Code
|
R-PSSO-G2
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Number of Elements
|
1
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Number of Terminals
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2
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Operating Mode
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ENHANCEMENT MODE
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Operating Temperature-Max
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175 °C
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Package Body Material
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PLASTIC/EPOXY
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Package Shape
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RECTANGULAR
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Package Style
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SMALL OUTLINE
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Polarity/Channel Type
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P-CHANNEL
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Power Dissipation Ambient-Max
|
90 W
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Pulsed Drain Current-Max (IDM)
|
81 A
|
Qualification Status
|
Not Qualified
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Surface Mount
|
YES
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Terminal Form
|
GULL WING
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Terminal Position
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SINGLE
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Transistor Application
|
SWITCHING
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Transistor Element Material
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SILICON
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Turn-off Time-Max (toff)
|
200 ns
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Turn-on Time-Max (ton)
|
230 ns
|