Datasheets
MTD10N05ET4 by:

Power Field-Effect Transistor, 10A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, CASE 369A-13, DPAK-3

Part Details for MTD10N05ET4 by Motorola Semiconductor Products

Overview of MTD10N05ET4 by Motorola Semiconductor Products

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Price & Stock for MTD10N05ET4

Part # Distributor Description Stock Price Buy
Bristol Electronics   1226
RFQ
Quest Components 10 A, 50 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET 283
Buy Now
Quest Components 10 A, 50 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET 980
  • 1 $3.6000
  • 361 $1.4850
  • 674 $1.3500
$1.3500 / $3.6000 Buy Now

Part Details for MTD10N05ET4

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MTD10N05ET4 Part Data Attributes

MTD10N05ET4 Motorola Semiconductor Products
Buy Now Datasheet
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MTD10N05ET4 Motorola Semiconductor Products Power Field-Effect Transistor, 10A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, CASE 369A-13, DPAK-3
Part Life Cycle Code Obsolete
Ihs Manufacturer MOTOROLA INC
Package Description SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code unknown
ECCN Code EAR99
Case Connection DRAIN
Configuration SINGLE
DS Breakdown Voltage-Min 50 V
Drain Current-Max (ID) 10 A
Drain-source On Resistance-Max 0.1 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Element Material SILICON

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