Part Details for MTD3055VL by Motorola Semiconductor Products
Overview of MTD3055VL by Motorola Semiconductor Products
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- Number of Functional Equivalents:
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Applications
Energy and Power Systems
Medical Imaging
Robotics and Drones
Price & Stock for MTD3055VL
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 60 |
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RFQ | ||
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Quest Components | MOSFET Transistor, N-Channel, TO-252 | 27 |
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$0.6521 / $1.0869 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-252 | 20 |
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$0.6400 / $0.8000 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-252 | 4 |
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$1.0920 / $1.3650 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-252 | 48 |
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$2.2000 / $4.0000 | Buy Now |
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ComSIT USA | 12 AMPS, 60 VOLTS N-CHANNEL DPAK-3 POWER MOSFET Power Field-Effect Transistor, 12A I(D), 60V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Not Compliant | Europe - 975 |
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RFQ |
Part Details for MTD3055VL
MTD3055VL CAD Models
MTD3055VL Part Data Attributes
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MTD3055VL
Motorola Semiconductor Products
Buy Now
Datasheet
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MTD3055VL
Motorola Semiconductor Products
Power Field-Effect Transistor, 12A I(D), 60V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3
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| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | MOTOROLA INC | |
| Package Description | DPAK-3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Avalanche Energy Rating (Eas) | 72 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 12 A | |
| Drain-source On Resistance-Max | 0.18 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 40 pF | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 48 W | |
| Power Dissipation-Max (Abs) | 48 W | |
| Pulsed Drain Current-Max (IDM) | 42 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 120 ns | |
| Turn-on Time-Max (ton) | 210 ns |