Part Details for MTD4N20ET4 by Motorola Mobility LLC
Overview of MTD4N20ET4 by Motorola Mobility LLC
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (7 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (9 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Medical Imaging
Robotics and Drones
Part Details for MTD4N20ET4
MTD4N20ET4 CAD Models
MTD4N20ET4 Part Data Attributes
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MTD4N20ET4
Motorola Mobility LLC
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Datasheet
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MTD4N20ET4
Motorola Mobility LLC
4A, 200V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET
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| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | MOTOROLA INC | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Case Connection | DRAIN | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 4 A | |
| Drain-source On Resistance-Max | 1.2 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 40 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Element Material | SILICON |
Alternate Parts for MTD4N20ET4
This table gives cross-reference parts and alternative options found for MTD4N20ET4. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MTD4N20ET4, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| FQD5N20LTM | Power MOSFET, N-Channel, Logic Level, QFET®, 200 V, 3.8 A, 1.2 Ω, DPAK, 2500-REEL | onsemi | MTD4N20ET4 vs FQD5N20LTM |
| FQD5N20LTM | Power Field-Effect Transistor, 3.8A I(D), 200V, 1.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3 | Fairchild Semiconductor Corporation | MTD4N20ET4 vs FQD5N20LTM |
| MTD4N20E | 4A, 200V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET | Motorola Mobility LLC | MTD4N20ET4 vs MTD4N20E |
| MTD4N20E1 | 4A, 200V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369C, DPAK-3 | Rochester Electronics LLC | MTD4N20ET4 vs MTD4N20E1 |
| MTD4N20E | 4A, 200V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369D, DPAK-3 | Rochester Electronics LLC | MTD4N20ET4 vs MTD4N20E |
| FQD5N20L | Power Field-Effect Transistor, 3.8A I(D), 200V, 1.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | Fairchild Semiconductor Corporation | MTD4N20ET4 vs FQD5N20L |
| MTD4N20E-1 | 4A, 200V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369C, DPAK-3 | Rochester Electronics LLC | MTD4N20ET4 vs MTD4N20E-1 |