MTD5N05T4
Description: Power Field-Effect Transistor, 5A I(D), 50V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Overview of MTD5N05T4 by Motorola Semiconductor Products

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  • Distributor Offerings: ( 0 listings )
  • Number of FFF Equivalents: ( 0 replacements )
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  • Number of Functional Equivalents: ( 0 options )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )

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Part Data Attributes for MTD5N05T4 by Motorola Semiconductor Products

MTD5N05T4
Motorola Semiconductor Products
-
-
Part Life Cycle Code
Obsolete
Ihs Manufacturer
MOTOROLA INC
Package Description
SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code
unknown
ECCN Code
EAR99
HTS Code
8541.29.00.95
Case Connection
DRAIN
Configuration
SINGLE
DS Breakdown Voltage-Min
50 V
Drain Current-Max (ID)
5 A
Drain-source On Resistance-Max
0.4 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-252
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Number of Terminals
2
Operating Mode
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
Power Dissipation Ambient-Max
1.75 W
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Form
GULL WING
Terminal Position
SINGLE
Transistor Element Material
SILICON
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  1. MTD5N05T4
    Motorola Semiconductor Products
    Power Field-Effect Transistor, 5A I(D), 50V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
    VS

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