MTI200WX75GD-SMD
Description: Power Field-Effect Transistor, 255A I(D), 75V, 0.0013ohm, 6-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

Overview of MTI200WX75GD-SMD by IXYS Corporation

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
  • Distributor Offerings: ( 4 listings )
  • Number of FFF Equivalents: ( 0 replacements )
  • CAD Models: ( Request Part )
  • Number of Functional Equivalents: ( 0 options )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )
Where used in Applications: Consumer Electronics Audio and Video Systems

Available Datasheets

Part # Manufacturer Description Datasheet
BLM15PX121BH1D Murata Manufacturing Co Ltd FB SMD 0402inch 120ohm POWRTRN
BLM15PX181SH1D Murata Manufacturing Co Ltd FB SMD 0402inch 180ohm POWRTRN
BLM21HE802SN1L Murata Manufacturing Co Ltd FB SMD 0805inch 8000ohm NONAUTO

Price & Stock for MTI200WX75GD-SMD by IXYS Corporation

Part # Manufacturer Description Stock Price Buy
DISTI # 238-MTI200WX75GD-SMD-ND
DigiKey MOSFET 6N-CH 75V 255A ISOPLUS Min Qty: 104 Lead time: 76 Weeks Container: Tube Temporarily Out of Stock
  • 104 $27.1608
$27.1608 Buy Now
DISTI # 747-MTI200WX75GD-SMD
Mouser Electronics MOSFET Modules ISOPLUS 75V 255A 3-PH BRIDGE 0
  • 104 $28.6000
$28.6000 Order Now
Future Electronics Three phase full Bridge with Trench MOSFETs in DCB isolated high current package RoHS: Compliant pbFree: Yes Min Qty: 13 Package Multiple: 1 Container: Bulk 0
Bulk
  • 1 $30.3900
  • 4 $30.0100
  • 15 $29.6500
  • 40 $29.3800
  • 100 $28.9500
$28.9500 / $30.3900 Buy Now
DISTI # MTI200WX75GD-SMD
TTI MOSFET Modules ISOPLUS 75V 255A 3-PH BRIDGE Min Qty: 104 Package Multiple: 52 Container: Tube Americas - 0
  • 104 $28.3100
$28.3100 Buy Now

CAD Models for MTI200WX75GD-SMD by IXYS Corporation
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Part Data Attributes for MTI200WX75GD-SMD by IXYS Corporation

MTI200WX75GD-SMD
IXYS Corporation
-
-
Rohs Code
Yes
Part Life Cycle Code
Transferred
Ihs Manufacturer
IXYS CORP
Reach Compliance Code
not_compliant
ECCN Code
EAR99
Additional Feature
HIGH RELIABILITY
Case Connection
ISOLATED
Configuration
3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
75 V
Drain Current-Max (ID)
255 A
Drain-source On Resistance-Max
0.0013 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PDSO-G24
JESD-609 Code
e3
Number of Elements
6
Number of Terminals
24
Operating Mode
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
Surface Mount
YES
Terminal Finish
TIN OVER NICKEL
Terminal Form
GULL WING
Terminal Position
DUAL
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Want to compare parts?
  1. MTI200WX75GD-SMD
    IXYS Corporation
    Power Field-Effect Transistor, 255A I(D), 75V, 0.0013ohm, 6-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
    VS

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