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Power Field-Effect Transistor, 255A I(D), 75V, 0.0013ohm, 6-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Manufacturer | Description | Datasheet |
---|---|---|---|
BLM15PX121BH1D | Murata Manufacturing Co Ltd | FB SMD 0402inch 120ohm POWRTRN | |
BLM15PX181SH1D | Murata Manufacturing Co Ltd | FB SMD 0402inch 180ohm POWRTRN | |
BLM21HE802SN1L | Murata Manufacturing Co Ltd | FB SMD 0805inch 8000ohm NONAUTO |
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
03AH2694
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Newark | Mosfet Module - Sixpack Isoplus-Dil/ Tube |Littelfuse MTI200WX75GD-SMD RoHS: Not Compliant Min Qty: 104 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$28.2300 / $29.0900 | Buy Now |
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MTI200WX75GD-SMD
Littelfuse Inc
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Datasheet
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MTI200WX75GD-SMD
Littelfuse Inc
Power Field-Effect Transistor, 255A I(D), 75V, 0.0013ohm, 6-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | LITTELFUSE INC | |
Package Description | SMALL OUTLINE, R-PDSO-G24 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | LITTELFUSE | |
Additional Feature | HIGH RELIABILITY | |
Case Connection | ISOLATED | |
Configuration | 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 75 V | |
Drain Current-Max (ID) | 255 A | |
Drain-source On Resistance-Max | 0.0013 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G24 | |
JESD-609 Code | e3 | |
Number of Elements | 6 | |
Number of Terminals | 24 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Surface Mount | YES | |
Terminal Finish | TIN OVER NICKEL | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |