Part Details for MTP50N05E by Motorola Semiconductor Products
Results Overview of MTP50N05E by Motorola Semiconductor Products
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (2 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
MTP50N05E Information
MTP50N05E by Motorola Semiconductor Products is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for MTP50N05E
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 23 |
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RFQ | ||
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Component Electronics, Inc | IN STOCK SHIP TODAY | 18 |
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$1.5000 / $2.3100 | Buy Now |
Part Details for MTP50N05E
MTP50N05E CAD Models
MTP50N05E Part Data Attributes
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MTP50N05E
Motorola Semiconductor Products
Buy Now
Datasheet
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Compare Parts:
MTP50N05E
Motorola Semiconductor Products
Power Field-Effect Transistor, 50A I(D), 50V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | MOTOROLA INC | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Additional Feature | LEADFORM OPTIONS ARE AVAILABLE | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 50 V | |
Drain Current-Max (ID) | 50 A | |
Drain-source On Resistance-Max | 0.028 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 400 pF | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 125 W | |
Power Dissipation-Max (Abs) | 125 W | |
Pulsed Drain Current-Max (IDM) | 160 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | TIN LEAD | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 95 ns | |
Turn-on Time-Max (ton) | 85 ns |
Alternate Parts for MTP50N05E
This table gives cross-reference parts and alternative options found for MTP50N05E. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MTP50N05E, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
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HUF75321P3_NL | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 35A I(D), 55V, 0.034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, | MTP50N05E vs HUF75321P3_NL |
MTP50N05E | National Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 50A I(D), 50V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | MTP50N05E vs MTP50N05E |