There are no models available for this part yet.
Overview of MTP8N10 by Motorola Mobility LLC
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 10 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
CAD Models for MTP8N10 by Motorola Mobility LLC
Part Data Attributes for MTP8N10 by Motorola Mobility LLC
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|
|---|---|
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Rohs Code
|
No
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Part Life Cycle Code
|
Obsolete
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Ihs Manufacturer
|
MOTOROLA INC
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Package Description
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FLANGE MOUNT, R-PSFM-T3
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Reach Compliance Code
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unknown
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ECCN Code
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EAR99
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HTS Code
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8541.29.00.95
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Additional Feature
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LEADFORM OPTIONS ARE AVAILABLE
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Case Connection
|
DRAIN
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Configuration
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SINGLE WITH BUILT-IN DIODE
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DS Breakdown Voltage-Min
|
100 V
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Drain Current-Max (ID)
|
8 A
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Drain-source On Resistance-Max
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0.5 Ω
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FET Technology
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METAL-OXIDE SEMICONDUCTOR
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Feedback Cap-Max (Crss)
|
100 pF
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JEDEC-95 Code
|
TO-220AB
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JESD-30 Code
|
R-PSFM-T3
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JESD-609 Code
|
e0
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Number of Elements
|
1
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Number of Terminals
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3
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Operating Mode
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ENHANCEMENT MODE
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Operating Temperature-Max
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150 °C
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Package Body Material
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PLASTIC/EPOXY
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Package Shape
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RECTANGULAR
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Package Style
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FLANGE MOUNT
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Polarity/Channel Type
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N-CHANNEL
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Power Dissipation Ambient-Max
|
75 W
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Power Dissipation-Max (Abs)
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75 W
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Pulsed Drain Current-Max (IDM)
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20 A
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Qualification Status
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Not Qualified
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Surface Mount
|
NO
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Terminal Finish
|
TIN LEAD
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Terminal Form
|
THROUGH-HOLE
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Terminal Position
|
SINGLE
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Transistor Application
|
SWITCHING
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Transistor Element Material
|
SILICON
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Turn-off Time-Max (toff)
|
110 ns
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Turn-on Time-Max (ton)
|
170 ns
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Alternate Parts for MTP8N10
This table gives cross-reference parts and alternative options found for MTP8N10. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MTP8N10, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| MTP10N10E | 10A, 100V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN | Texas Instruments | MTP8N10 vs MTP10N10E |
| IRF522-006 | Power Field-Effect Transistor, 8A I(D), 100V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | International Rectifier | MTP8N10 vs IRF522-006 |
| IRF523 | 8A, 80V, 0.36ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN | STMicroelectronics | MTP8N10 vs IRF523 |
| IRF523-001 | Power Field-Effect Transistor, 8A I(D), 80V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | International Rectifier | MTP8N10 vs IRF523-001 |
| IRF523 | Power Field-Effect Transistor, 7A I(D), 60V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Motorola Semiconductor Products | MTP8N10 vs IRF523 |
| IRF521 | 8A, 60V, 0.3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Motorola Mobility LLC | MTP8N10 vs IRF521 |
| MTP8N10 | Power Field-Effect Transistor, 8A I(D), 100V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Motorola Semiconductor Products | MTP8N10 vs MTP8N10 |
| IRF522-010 | Power Field-Effect Transistor, 8A I(D), 100V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | International Rectifier | MTP8N10 vs IRF522-010 |
| IRF522-001 | Power Field-Effect Transistor, 8A I(D), 100V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | International Rectifier | MTP8N10 vs IRF522-001 |
| MTP8N08 | Power Field-Effect Transistor, 8A I(D), 80V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Motorola Semiconductor Products | MTP8N10 vs MTP8N08 |