Part Details for MTV10N100E by Motorola Semiconductor Products
Overview of MTV10N100E by Motorola Semiconductor Products
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Price & Stock for MTV10N100E
Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | 31 |
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$10.8000 / $16.0000 | Buy Now |
Part Details for MTV10N100E
MTV10N100E CAD Models
MTV10N100E Part Data Attributes
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MTV10N100E
Motorola Semiconductor Products
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Datasheet
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MTV10N100E
Motorola Semiconductor Products
Power Field-Effect Transistor, 10A I(D), 1000V, 1.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D3PAK-3
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Rohs Code | No | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | MOTOROLA INC | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 500 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 1000 V | |
Drain Current-Max (ID) | 10 A | |
Drain-source On Resistance-Max | 1.3 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 90 pF | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 250 W | |
Power Dissipation-Max (Abs) | 3.6 W | |
Pulsed Drain Current-Max (IDM) | 30 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Tin/Lead (Sn/Pb) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 380 ns | |
Turn-on Time-Max (ton) | 180 ns |