Part Details for MTW20N50E by Motorola Mobility LLC
Overview of MTW20N50E by Motorola Mobility LLC
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (2 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (4 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for MTW20N50E
MTW20N50E CAD Models
MTW20N50E Part Data Attributes
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MTW20N50E
Motorola Mobility LLC
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Datasheet
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MTW20N50E
Motorola Mobility LLC
20A, 500V, 0.27ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE
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Part Life Cycle Code | Transferred | |
Ihs Manufacturer | MOTOROLA INC | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 2000 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 500 V | |
Drain Current-Max (ID) | 20 A | |
Drain-source On Resistance-Max | 0.27 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-247AE | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 250 W | |
Pulsed Drain Current-Max (IDM) | 60 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Tin/Lead (Sn/Pb) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for MTW20N50E
This table gives cross-reference parts and alternative options found for MTW20N50E. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MTW20N50E, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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SSH22N50 | Power Field-Effect Transistor, 22A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | Samsung Semiconductor | MTW20N50E vs SSH22N50 |
SSH20N50 | Power Field-Effect Transistor, 20A I(D), 500V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | Samsung Semiconductor | MTW20N50E vs SSH20N50 |