Datasheets
MTW32N20E by:

32A, 200V, 0.085ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE

Part Details for MTW32N20E by Motorola Mobility LLC

Overview of MTW32N20E by Motorola Mobility LLC

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Part Details for MTW32N20E

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MTW32N20E Part Data Attributes

MTW32N20E Motorola Mobility LLC
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MTW32N20E Motorola Mobility LLC 32A, 200V, 0.085ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE
Part Life Cycle Code Transferred
Ihs Manufacturer MOTOROLA INC
Package Description FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 810 mJ
Case Connection DRAIN
Configuration SINGLE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 32 A
Drain-source On Resistance-Max 0.085 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247AE
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 180 W
Pulsed Drain Current-Max (IDM) 128 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for MTW32N20E

This table gives cross-reference parts and alternative options found for MTW32N20E. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MTW32N20E, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRFP250 33A, 200V, 0.085ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 Intersil Corporation MTW32N20E vs IRFP250
IRFP250PBF Power Field-Effect Transistor, 30A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT PACKAGE-3 Vishay Siliconix MTW32N20E vs IRFP250PBF
IRFP250NPBF Power Field-Effect Transistor, 30A I(D), 200V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, LEAD FREE PACKAGE-3 International Rectifier MTW32N20E vs IRFP250NPBF
IRFP250N Power Field-Effect Transistor, 30A I(D), 200V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, TO-247AC, 3 PIN International Rectifier MTW32N20E vs IRFP250N
IRFP250 Power Field-Effect Transistor, 30A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN Samsung Semiconductor MTW32N20E vs IRFP250
BUZ341 Power Field-Effect Transistor, 33A I(D), 200V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218, Siemens MTW32N20E vs BUZ341
IRFP250 33A, 200V, 0.085ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 Rochester Electronics LLC MTW32N20E vs IRFP250
IRFP250NPBF Power Field-Effect Transistor, 30A I(D), 200V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-247AC, LEAD FREE PACKAGE-3 Infineon Technologies AG MTW32N20E vs IRFP250NPBF
IRFIP250 Power Field-Effect Transistor, 22A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 International Rectifier MTW32N20E vs IRFIP250
IRFP250PBF Power Field-Effect Transistor, 30A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC International Rectifier MTW32N20E vs IRFP250PBF
Part Number Description Manufacturer Compare
IRFP250 Power Field-Effect Transistor, 30A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN Samsung Semiconductor MTW32N20E vs IRFP250
IRFP250PBF Power Field-Effect Transistor, 30A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT PACKAGE-3 Vishay Siliconix MTW32N20E vs IRFP250PBF
SSH40N20 Power Field-Effect Transistor, 40A I(D), 200V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN Samsung Semiconductor MTW32N20E vs SSH40N20
IRFP250 33A, 200V, 0.085ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 Intersil Corporation MTW32N20E vs IRFP250
IRFP250 Power Field-Effect Transistor, 30A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC International Rectifier MTW32N20E vs IRFP250
IRFP250NPBF Power Field-Effect Transistor, 30A I(D), 200V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, LEAD FREE PACKAGE-3 International Rectifier MTW32N20E vs IRFP250NPBF
SSH40N20 Power Field-Effect Transistor, 40A I(D), 200V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, Fairchild Semiconductor Corporation MTW32N20E vs SSH40N20
IRFP250PBF Power Field-Effect Transistor, 30A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC International Rectifier MTW32N20E vs IRFP250PBF
BUZ341 Power Field-Effect Transistor, 33A I(D), 200V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218, Siemens MTW32N20E vs BUZ341
IRFIP250 Power Field-Effect Transistor, 22A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 International Rectifier MTW32N20E vs IRFIP250

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