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MTW8N60E by:

Power Field-Effect Transistor, 8A I(D), 600V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AE

Part Details for MTW8N60E by Motorola Semiconductor Products

Overview of MTW8N60E by Motorola Semiconductor Products

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Price & Stock for MTW8N60E

Part # Distributor Description Stock Price Buy
ComSIT USA 8 AMPS, 600 VOLTS N-CHANNEL POWER MOSFET Power Field-Effect Transistor, 8A I(D), 600V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AE RoHS: Not Compliant Europe - 30
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Part Details for MTW8N60E

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MTW8N60E Part Data Attributes

MTW8N60E Motorola Semiconductor Products
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MTW8N60E Motorola Semiconductor Products Power Field-Effect Transistor, 8A I(D), 600V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AE
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer MOTOROLA INC
Package Description FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code unknown
ECCN Code EAR99
Case Connection DRAIN
Configuration SINGLE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 8 A
Drain-source On Resistance-Max 0.5 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247AE
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 180 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Element Material SILICON

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