Part Details for MUBW15-12A7 by Littelfuse Inc
Overview of MUBW15-12A7 by Littelfuse Inc
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (7 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Space Technology
Aerospace and Defense
Energy and Power Systems
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| R5F212A7SNFA#V2 | Renesas Electronics Corporation | 16-bit Microcontrollers with R8C CPU Core (Non Promotion) | |
| R5F212A7SDFP#X6 | Renesas Electronics Corporation | 16-bit Microcontrollers with R8C CPU Core (Non Promotion) | |
| R5F212A7SNFA#X6 | Renesas Electronics Corporation | 16-bit Microcontrollers with R8C CPU Core (Non Promotion) |
Price & Stock for MUBW15-12A7
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
03AH5615
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Newark | Igbt Mod, 1.2Kv, 35A, 100W, Continuous Collector Current:35A, Collector Emitter Saturation Voltage:2.1V, Power Dissipation:100W, Operating Temperature Max:125°C, Igbt Termination:Press Fit, Collector Emitter Voltage Max:1.2Kv Rohs Compliant: Yes |Littelfuse MUBW15-12A7 RoHS: Compliant Min Qty: 6 Package Multiple: 1 Date Code: 1 Container: Bulk | 0 |
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Part Details for MUBW15-12A7
MUBW15-12A7 CAD Models
MUBW15-12A7 Part Data Attributes
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MUBW15-12A7
Littelfuse Inc
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Datasheet
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Compare Parts:
MUBW15-12A7
Littelfuse Inc
Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | LITTELFUSE INC | |
| Package Description | FLANGE MOUNT, R-XUFM-X24 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | LITTELFUSE | |
| Additional Feature | LOW SWITCHING LOSS, LOW SATURATION VOLTAGE | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 35 A | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Configuration | COMPLEX | |
| JESD-30 Code | R-XUFM-X24 | |
| JESD-609 Code | e3 | |
| Number of Elements | 7 | |
| Number of Terminals | 24 | |
| Operating Temperature-Max | 125 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN OVER NICKEL | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 570 ns | |
| Turn-on Time-Nom (ton) | 170 ns |
Alternate Parts for MUBW15-12A7
This table gives cross-reference parts and alternative options found for MUBW15-12A7. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MUBW15-12A7, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| BSM10GP120 | Insulated Gate Bipolar Transistor, 20A I(C), 1200V V(BR)CES, N-Channel, MODULE-24 | Infineon Technologies AG | MUBW15-12A7 vs BSM10GP120 |
| SKIIP21NAB12I | Insulated Gate Bipolar Transistor, 16A I(C), 1200V V(BR)CES, N-Channel, CASE M2, 27 PIN | SEMIKRON | MUBW15-12A7 vs SKIIP21NAB12I |
| MUBW10-12A7 | Insulated Gate Bipolar Transistor, 20A I(C), 1200V V(BR)CES, N-Channel, | Littelfuse Inc | MUBW15-12A7 vs MUBW10-12A7 |
| SKIIP20NAB12 | Insulated Gate Bipolar Transistor, 16A I(C), 1200V V(BR)CES, N-Channel, CASE M2, 30 PIN | SEMIKRON | MUBW15-12A7 vs SKIIP20NAB12 |
| SKIIP22NAB12 | Insulated Gate Bipolar Transistor, 23A I(C), 1200V V(BR)CES, N-Channel, CASE M2, MINISKIIP-31 | SEMIKRON | MUBW15-12A7 vs SKIIP22NAB12 |
| SKIIP30NAB12 | Insulated Gate Bipolar Transistor, 33A I(C), 1200V V(BR)CES, N-Channel, CASE M3, MINISKIIP-22 | SEMIKRON | MUBW15-12A7 vs SKIIP30NAB12 |
| BSM15GP120 | Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, MODULE-24 | Infineon Technologies AG | MUBW15-12A7 vs BSM15GP120 |