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Part Details for MW6S004NT1 by NXP Semiconductors
Results Overview of MW6S004NT1 by NXP Semiconductors
- Distributor Offerings: (9 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Audio and Video Systems
MW6S004NT1 Information
MW6S004NT1 by NXP Semiconductors is an RF Power Field-Effect Transistor.
RF Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for MW6S004NT1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
31AC6688
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Newark | Transistor, Rf, 68V, Pld-1.5-4, Drain Source Voltage Vds:68Vdc, Continuous Drain Current Id:-, Power Dissipation Pd:-, Operating Frequency Min:1Mhz, Operating Frequency Max:2000Mhz, Rf Transistor Case:Pld-1.5, No. Of Pins:4Pins, Rohs Compliant: Yes |Nxp MW6S004NT1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 149 |
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$9.7900 / $15.3300 | Buy Now |
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DISTI #
81K3648
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Newark | Rf Mosfet, N Channel, 68V, 466-03, Full Reel, Drain Source Voltage Vds:68V, Continuous Drain Current Id:-, Power Dissipation:-, Operating Frequency Min:1Mhz, Operating Frequency Max:2Ghz, No. Of Pins:4Pins, Channel Type:N Channel Rohs Compliant: Yes |Nxp MW6S004NT1 RoHS: Compliant Min Qty: 1000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$9.4900 | Buy Now |
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DISTI #
79AH4829
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Newark | Lateral N-Channel Rf Power Mosfet, 1-2000 Mhz, 4 W, 28 V Rohs Compliant: Yes |Nxp MW6S004NT1 RoHS: Compliant Min Qty: 1000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$8.8300 | Buy Now |
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DISTI #
MW6S004NT1
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Avnet Americas | RF FET Transistor, 68 VDC, 1 MHz, 2000 MHz, PLD-1.5 - Tape and Reel (Alt: MW6S004NT1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 10 Weeks, 0 Days Container: Reel | 0 |
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$8.5070 / $8.7955 | Buy Now |
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DISTI #
MW6S004NT1
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Avnet Americas | RF FET Transistor, 68 VDC, 1 MHz, 2000 MHz, PLD-1.5 - Tape and Reel (Alt: MW6S004NT1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 10 Weeks, 0 Days Container: Reel | 0 |
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$8.5070 / $8.7955 | Buy Now |
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DISTI #
MW6S004NT1
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Richardson RFPD | RF POWER TRANSISTOR RoHS: Compliant Min Qty: 1 | 2417 |
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$11.1400 / $15.9800 | Buy Now |
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DISTI #
MW6S004NT1
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Avnet Silica | RF FET Transistor 68 VDC 1 MHz 2000 MHz PLD15 (Alt: MW6S004NT1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 12 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
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DISTI #
MW6S004NT1
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EBV Elektronik | RF FET Transistor 68 VDC 1 MHz 2000 MHz PLD15 (Alt: MW6S004NT1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 12 Weeks, 0 Days | EBV - 2000 |
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Buy Now | |
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LCSC | 4W PLD-1.5 MOSFETs ROHS | 23 |
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$14.9255 / $18.8768 | Buy Now |
Part Details for MW6S004NT1
MW6S004NT1 CAD Models
MW6S004NT1 Part Data Attributes
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MW6S004NT1
NXP Semiconductors
Buy Now
Datasheet
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Compare Parts:
MW6S004NT1
NXP Semiconductors
L BAND, Si, N-CHANNEL, RF POWER, MOSFET
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| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | NXP SEMICONDUCTORS | |
| Package Description | ROHS COMPLIANT, PLASTIC, PLD 1.5, CASE 466-03, 4 PIN | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00 | |
| Factory Lead Time | 10 Weeks | |
| Samacsys Manufacturer | NXP | |
| Case Connection | SOURCE | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 68 V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Highest Frequency Band | L BAND | |
| JESD-30 Code | R-PQSO-N4 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 3 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | NO LEAD | |
| Terminal Position | QUAD | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | SILICON |
Alternate Parts for MW6S004NT1
This table gives cross-reference parts and alternative options found for MW6S004NT1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MW6S004NT1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| BFM23 | TT Electronics Resistors | Check for Price | RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | MW6S004NT1 vs BFM23 |
MW6S004NT1 Frequently Asked Questions (FAQ)
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For optimal performance, it's recommended to follow NXP's application note AN11542 for PCB layout guidelines, and ensure a thermal resistance of < 10°C/W for the device. A 4-layer PCB with a solid ground plane and thermal vias is recommended.
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To optimize for low power consumption, use the device's built-in power-saving features such as dynamic voltage and frequency scaling, and enable the low-power mode when possible. Additionally, optimize the system's clock frequency and voltage supply to minimize power consumption.
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For optimal decoupling, use 100nF and 10uF capacitors with a voltage rating of 10V or higher, placed as close as possible to the device's power pins. Follow NXP's application note AN11542 for more detailed guidelines.
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To ensure EMC and reduce EMI, follow NXP's application note AN11542 for PCB layout guidelines, use a shielded enclosure, and implement EMI filtering on the device's I/O lines. Additionally, ensure proper grounding and decoupling of the device.
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For optimal performance, set the internal voltage regulator to 1.2V or 1.35V, depending on the specific application requirements. Refer to the device's datasheet for more information on voltage regulator settings.