Part Details for MWI200-06A8 by Littelfuse Inc
Overview of MWI200-06A8 by Littelfuse Inc
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (5 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Internet of Things (IoT)
Environmental Monitoring
Financial Technology (Fintech)
Smart Cities
Transportation and Logistics
Agriculture Technology
Telecommunications
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Education and Research
Consumer Electronics
Security and Surveillance
Audio and Video Systems
Computing and Data Storage
Healthcare
Entertainment and Gaming
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| HI1-0506A-8 | Renesas Electronics Corporation | 16-Channel, 8-Channel, Differential 8-Channel and Differential 4-Channel, CMOS Analog MUXs with Active Overvoltage Protection |
Part Details for MWI200-06A8
MWI200-06A8 CAD Models
MWI200-06A8 Part Data Attributes
|
|
MWI200-06A8
Littelfuse Inc
Buy Now
Datasheet
|
Compare Parts:
MWI200-06A8
Littelfuse Inc
Insulated Gate Bipolar Transistor, 225A I(C), 600V V(BR)CES, N-Channel, SIXPACK-19
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | LITTELFUSE INC | |
| Package Description | FLANGE MOUNT, R-XUFM-X19 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | LITTELFUSE | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 225 A | |
| Collector-Emitter Voltage-Max | 600 V | |
| Configuration | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE | |
| Gate-Emitter Voltage-Max | 20 V | |
| JESD-30 Code | R-XUFM-X19 | |
| JESD-609 Code | e3 | |
| Number of Elements | 6 | |
| Number of Terminals | 19 | |
| Operating Temperature-Max | 125 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 675 W | |
| Qualification Status | Not Qualified | |
| Reference Standard | UL RECOGNIZED | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN OVER NICKEL | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 340 ns | |
| Turn-on Time-Nom (ton) | 230 ns | |
| VCEsat-Max | 2.5 V |
Alternate Parts for MWI200-06A8
This table gives cross-reference parts and alternative options found for MWI200-06A8. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MWI200-06A8, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| MG200J6ES60 | TRANSISTOR 200 A, 600 V, N-CHANNEL IGBT, 2-123B1A, 17 PIN, Insulated Gate BIP Transistor | Toshiba America Electronic Components | MWI200-06A8 vs MG200J6ES60 |
| BSM200GD60DLCBOSA1 | Insulated Gate Bipolar Transistor, MODULE-39 | Infineon Technologies AG | MWI200-06A8 vs BSM200GD60DLCBOSA1 |
| MWI150-06A8 | Insulated Gate Bipolar Transistor, 170A I(C), 600V V(BR)CES, N-Channel, SIXPACK-33 | Littelfuse Inc | MWI200-06A8 vs MWI150-06A8 |
| CM200TU-12F | Insulated Gate Bipolar Transistor, 200A I(C), 600V V(BR)CES, N-Channel | Powerex Power Semiconductors | MWI200-06A8 vs CM200TU-12F |
| CM200TU-12F | Insulated Gate Bipolar Transistor, 200A I(C), 600V V(BR)CES, N-Channel, MODULE-17 | Mitsubishi Electric | MWI200-06A8 vs CM200TU-12F |