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Transistors / Power Field-Effect Transistors / NCV8440ASTT3G
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NCV8440ASTT3G by:

Clamped MOSFET, N-Channel, with ESD Protection, SOT-223 (TO-261) 4 LEAD, 4000-REEL, Automotive Qualified

Part Details for NCV8440ASTT3G by onsemi

Overview of NCV8440ASTT3G by onsemi

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Applications Consumer Electronics

Price & Stock for NCV8440ASTT3G

Part # Distributor Description Stock Price Buy
DISTI # 76T6425
Newark Clamped Mosfet, N-Channel, With Esd Protection/ Reel Rohs Compliant: Yes |Onsemi NCV8440ASTT3G Min Qty: 4000 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 3,000 $0.5560
  • 6,000 $0.5060
  • 12,000 $0.4550
  • 18,000 $0.4380
  • 30,000 $0.4280
$0.4280 / $0.5560 Buy Now
DISTI # 488-NCV8440ASTT3GCT-ND
DigiKey MOSFET N-CH 59V 2.6A SOT223 Min Qty: 1 Lead time: 47 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 3673
In Stock
  • 1 $1.1200
  • 10 $0.9180
  • 100 $0.7144
  • 500 $0.6055
  • 1,000 $0.4932
  • 2,000 $0.4643
  • 4,000 $0.4643
  • 8,000 $0.4422
  • 12,000 $0.4218
$0.4218 / $1.1200 Buy Now
DISTI # NCV8440ASTT3G
Avnet Americas Trans MOSFET N-CH 59V 2.6A 4-Pin(3+Tab) SOT-223 T/R - Tape and Reel (Alt: NCV8440ASTT3G) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 47 Weeks, 0 Days Container: Reel 0
  • 4,000 $0.5052
  • 8,000 $0.4917
  • 16,000 $0.4783
  • 24,000 $0.4648
  • 32,000 $0.4513
$0.4513 / $0.5052 Buy Now
DISTI # 863-NCV8440ASTT3G
Mouser Electronics MOSFET 2.6A, 52V N-CH, CLAM RoHS: Compliant 5081
  • 1 $1.1200
  • 10 $0.9170
  • 100 $0.7140
  • 500 $0.6050
  • 1,000 $0.4930
  • 2,000 $0.4640
  • 4,000 $0.4420
  • 8,000 $0.4210
$0.4210 / $1.1200 Buy Now
DISTI # NCV8440ASTT3G
Avnet Americas Trans MOSFET N-CH 59V 2.6A 4-Pin(3+Tab) SOT-223 T/R - Tape and Reel (Alt: NCV8440ASTT3G) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 47 Weeks, 0 Days Container: Reel 0
  • 4,000 $0.5052
  • 8,000 $0.4917
  • 16,000 $0.4783
  • 24,000 $0.4648
  • 32,000 $0.4513
$0.4513 / $0.5052 Buy Now
DISTI # NCV8440ASTT3G
Avnet Asia Trans MOSFET N-CH 59V 2.6A 4-Pin(3+Tab) SOT-223 T/R (Alt: NCV8440ASTT3G) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 47 Weeks, 0 Days 0
  • 4,000 $0.4432
  • 8,000 $0.4374
  • 12,000 $0.4318
  • 20,000 $0.4263
  • 40,000 $0.4158
  • 100,000 $0.4058
  • 200,000 $0.3962
$0.3962 / $0.4432 Buy Now
DISTI # NCV8440ASTT3G
Avnet Silica Trans MOSFET N-CH 59V 2.6A 4-Pin(3+Tab) SOT-223 T/R (Alt: NCV8440ASTT3G) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 5 Weeks, 2 Days Silica - 0
Buy Now
Chip1Cloud Protected Power MOSFET 2.6 A, 52 V, N?Channel, Logic Level, Clamped MOSFET w/ ESD Protection 258700
RFQ
DISTI # NCV8440ASTT3G
EBV Elektronik Trans MOSFET N-CH 59V 2.6A 4-Pin(3+Tab) SOT-223 T/R (Alt: NCV8440ASTT3G) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 7 Weeks, 0 Days EBV - 0
Buy Now
DISTI # 3616336
Farnell MOSFET'S - SINGLE RoHS: Compliant Min Qty: 4000 Lead time: 40 Weeks, 1 Days Container: Reel 0
  • 4,000 $0.4400
$0.4400 Buy Now

Part Details for NCV8440ASTT3G

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NCV8440ASTT3G Part Data Attributes:

Parametric Data
NCV8440ASTT3G onsemi
Buy Now Datasheet
Compare Parts:
NCV8440ASTT3G onsemi Clamped MOSFET, N-Channel, with ESD Protection, SOT-223 (TO-261) 4 LEAD, 4000-REEL, Automotive Qualified
Pbfree Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ONSEMI
Part Package Code SOT-223 (TO-261) 4 LEAD
Package Description TO-261, 4 PIN
Pin Count 4
Manufacturer Package Code 0.0318
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 36 Weeks
Samacsys Manufacturer onsemi
Avalanche Energy Rating (Eas) 110 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 52 V
Drain Current-Max (ID) 2.6 A
Drain-source On Resistance-Max 0.11 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-261AA
JESD-30 Code R-PDSO-G4
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 1.69 W
Pulsed Drain Current-Max (IDM) 10 A
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

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